SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE

• US 20090045525A1
• Filed: 08/14/2008
• Published: 02/19/2009
• Est. Priority Date: 08/17/2007
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: MATSUSHIMA, Ryoji, OKUMURA, Naohisa
• Granted Patent: US 7,911,045 B2
• Time in Patent Office: Days
• US Class Current: 257/777
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/24145 the bodies being stacked
• CPC Class Codes: H01L 2224/24998 Reinforcing structures, e.g. ramp-like support
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/4554 Coating
• CPC Class Codes: H01L 2224/48145 the bodies being stacked
• CPC Class Codes: H01L 2224/48147 with an intermediate bond, e.g. continuous wire daisy chain
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48471 the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
• CPC Class Codes: H01L 2224/48479 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/48624 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48799 Principal constituent of the connecting portion of the wire connector being Copper (Cu)
• CPC Class Codes: H01L 2224/48824 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/76155 : Jetting means, e.g. ink jet
• CPC Class Codes: H01L 2224/82007 : involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting a build-up interconnect during or after the bonding process
• CPC Class Codes: H01L 2224/82102 : using jetting, e.g. ink jet
• CPC Class Codes: H01L 2224/83191 : wherein the layer connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83856 : Pre-cured adhesive, i.e. B-stage adhesive
• CPC Class Codes: H01L 2224/83862 : Heat curing
• CPC Class Codes: H01L 2224/83874 : Ultraviolet [UV] curing
• CPC Class Codes: H01L 2224/8388 : Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives
• CPC Class Codes: H01L 2224/85186 : connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch
• CPC Class Codes: H01L 2224/85399 : Material
• CPC Class Codes: H01L 2224/92244 : the second connecting process involving a build-up interconnect
• CPC Class Codes: H01L 2224/92247 : the second connecting process involving a wire connector
• CPC Class Codes: H01L 2225/06506 : Wire or wire-like electrical connections between devices
• CPC Class Codes: H01L 2225/0651 : Wire or wire-like electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06562 : at least one device in the stack being rotated or offset
• CPC Class Codes: H01L 23/3128 : the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/585 : comprising conductive layers or plates or strips or rods or rings H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence
• CPC Class Codes: H01L 24/24 : of an individual high density interconnect connector
• CPC Class Codes: H01L 24/25 : of a plurality of high density interconnect connectors
• CPC Class Codes: H01L 24/27 : Manufacturing methods
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/743 : Apparatus for manufacturing layer connectors
• CPC Class Codes: H01L 24/82 : by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01037 : Rubidium [Rb]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/1815 : Shape
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/3862 : Sweep

Abstract

A semiconductor element is provided with electrode pads which are arranged on a front surface of an element main body, an insulating protection film which covers the front surface of the element main body excepting its outer peripheral area while exposing the electrode pads, and an insulating adhesive layer which is formed to cover a back surface, a sidewall surface and a corner between the front surface and the sidewall surface of the element main body. A plurality of semiconductor elements are stacked on a circuit substrate. The semiconductor elements are adhered via the insulating adhesive layer.

Claims

1. A semiconductor element, comprising:

an element main body having a front surface, a sidewall surface, and a back surface;

electrode pads arranged on the front surface of the element main body;

an insulating protection film which covers the front surface of the element main body excepting its outer peripheral area with the electrode pads exposed; and

an insulating adhesive layer which is formed to cover at least the back surface, the sidewall surface, and a corner between the front surface and the sidewall surface of the element main body.

2. The semiconductor element according to claim 1,

wherein the insulating adhesive layer is formed to cover the outer peripheral area of the front surface of the element main body which is not covered with the insulating protection film.

3. The semiconductor element according to claim 1,

wherein the insulating adhesive layer is provided with a thermosetting insulating resin layer in a semi-cured state.

4. A semiconductor device, comprising:

a circuit substrate which has an element mounting section and connection points;

an element group which has a plurality of the semiconductor elements according to claim 1 stacked on the element mounting section of the circuit substrate, the plurality of the semiconductor elements being adhered via the insulating adhesive layer;

connection members which electrically connect the connection points of the circuit substrate and the electrode pads of the semiconductor elements; and

a sealing portion which seals the element group and the connection members.

5. The semiconductor device according to claim 4,

wherein the plurality of the semiconductor elements are stacked to have a step-like shape to expose the electrode pads.

6. The semiconductor device according to claim 4,

wherein the connection members include metallic wires.

7. The semiconductor element according to claim 6,

wherein the insulating adhesive layer is formed to cover an outer peripheral area of the front surface of the element main body which is not covered with the insulating protection film, and the metallic wires are wired in contact with the insulating adhesive layer.

8. The semiconductor device according to claim 6,

wherein one ends of the metallic wires connected to the semiconductor element positioned at a lower side in the element group are buried into the insulating adhesive layer of the semiconductor element positioned at an upper side in the element group.

9. The semiconductor device according to claim 4,

wherein the insulating adhesive layer is formed to cover an outer peripheral area of the front surface of the element main body which is not covered with the insulating protection film, and the connection members have conductive layers.

10. The semiconductor device according to claim 4,

wherein the element group has a first element group which is provided with the plurality of the semiconductor elements stacked to have a step-like shape on the element mounting section of the circuit substrate, and a second element group which is provided with the plurality of the semiconductor elements stacked to have a step-like shape on the first element group in a direction opposite to the first element group.

11. A semiconductor device, comprising:

a wiring board having connection pads;

an element group including a relay element, disposed on the wiring board, having relay pads arranged along its outline side, and a plurality of semiconductor elements, disposed on the relay element, having electrode pads arranged along its outline side, the relay element and the plurality of semiconductor elements being stacked to have a step-like shape with the outline sides directed in the same direction and to expose the relay pads and the electrode pads;

conductive layers which electrically connect the electrode pads of the semiconductor elements and the relay pads of the relay element;

metallic wires which electrically connect the relay pads of the relay element and the connection pads of the wiring board; and

a sealing resin layer which is formed on the wiring board to seal the element group together with the metallic wires.

12. The semiconductor device according to claim 11, further comprising an insulating layer which covers sidewall surfaces corresponding to stepped portions of step sections of the semiconductor elements.

13. The semiconductor device according to claim 11,

wherein the conductive layer includes a coated layer of a conductive material.

14. A semiconductor device, comprising:

a wiring board having connection pads;

a first element group including a first relay element, disposed on the wiring board, having relay pads arranged along its outline side, and a plurality of semiconductor elements, disposed on the first relay element, having electrode pads arranged along its outline side, the first relay element and the semiconductor elements being stacked to have a step-like shape with the outline sides directed in the same direction and to expose the relay pads and the electrode pads;

first conductive layers which electrically connect the electrode pads of the semiconductor elements configuring the first element group and the relay pads of the first relay element;

first metallic wires which electrically connect the relay pads of the first relay element and the connection pads of the wiring board;

a second element group including a second relay element, disposed on the first element group, having relay pads arranged along its outline side, and a plurality of semiconductor elements, disposed on the second relay element, having electrode pads arranged along its outline side, the second relay element and the semiconductor elements being stacked to have a step-like shape with the outline sides directed in the same direction and to expose the relay pads and the electrode pads;

second conductive layers which electrically connect the electrode pads of the semiconductor elements configuring the second element group and the relay pads of the second relay element;

second metallic wire which electrically connect the relay pads of the second relay element and the connection pads of the wiring board; and

a sealing resin layer which is formed on the wiring board to seal the first and second element groups together with the first and second metallic wires.

15. The semiconductor device according to claim 14, further comprising insulating layers which cover sidewall surfaces corresponding to stepped portions of step sections of the semiconductor elements of the first and second element groups.

16. The semiconductor device according to claim 14,

wherein the semiconductor elements configuring the second element group are stacked to have the step-like shape in the same direction as the stepped direction of the semiconductor elements configuring the first element group.

17. The semiconductor device according to claim 14,

wherein an insulating resin is filled between the first relay element and the second relay element to cover step sections of the semiconductor elements of the first element group.

18. A semiconductor device, comprising:

a wiring board having connection pads;

an element group including a plurality of semiconductor elements, disposed on the wiring board, having electrode pads arranged along its outline side, the semiconductor elements being stacked to have a step-like shape with the outline sides directed in the same direction and to expose the electrode pads;

conductive layers which connect at least between the electrode pads of the semiconductor elements; and

a sealing resin layer which is formed on the wiring board to seal the element group,

wherein the conductive layers are partially routed on exposed surfaces corresponding to step surfaces of step sections of the semiconductor elements.

19. The semiconductor device according to claim 18, further comprising:

first insulating layers which cover sidewall surfaces corresponding to the stepped portions of the step section of the semiconductor elements; and

second insulating layers which are formed according to a wiring pattern of the conductive layers on the exposed surfaces of the semiconductor elements.

20. The semiconductor device according to claim 18,

wherein the element group includes a relay element, interposed between the wiring board and the semiconductor elements, having relay pads arranged along its outline side, and the relay pads are electrically connected to the electrode pads via the conductive layers and also electrically connected to the connection pads via metallic wires.