METHOD OF FABRICATING SEMICONDUCTOR LASER
First Claim
1. A method of fabricating a semiconductor laser including a two-dimensional photonic crystal, the method comprising the steps of:
- growing an InX1Ga1-X1N (0<
X1<
1) layer on a gallium nitride-based semiconductor region in a reactor;
after taking out, from the reactor, a substrate product including the InX1Ga1-X1N layer, forming a plurality of openings for a two-dimensional diffraction grating of the two-dimensional photonic crystal in the InX1Ga1-X1N layer to form a patterned InX1Ga1-X1N layer; and
growing an AlX2Ga1-X2N (0≦
X2≦
1) layer on the patterned InX1Ga1-X1N layer so as to form voids from the openings.
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Accused Products
Abstract
There is provided a method of fabricating a semiconductor laser including a two-dimensional photonic crystal. The method comprises the steps of growing an InX1Ga1-X1N (0<X1<1) layer on a gallium nitride-based semiconductor region in a reactor; after taking out a substrate product including the InX1Ga1-X1N layer from the reactor, forming a plurality of openings for a two-dimensional diffraction grating of the two-dimensional photonic crystal in the InX1Ga1-X1N layer to form a patterned InX1Ga1-X1N layer; and growing an AlX2Ga1-X2N (0≦X2≦1) layer on a top surface of the patterned InX1Ga1-X1N layer to form voids associated with the openings.
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Citations
20 Claims
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1. A method of fabricating a semiconductor laser including a two-dimensional photonic crystal, the method comprising the steps of:
-
growing an InX1Ga1-X1N (0<
X1<
1) layer on a gallium nitride-based semiconductor region in a reactor;after taking out, from the reactor, a substrate product including the InX1Ga1-X1N layer, forming a plurality of openings for a two-dimensional diffraction grating of the two-dimensional photonic crystal in the InX1Ga1-X1N layer to form a patterned InX1Ga1-X1N layer; and growing an AlX2Ga1-X2N (0≦
X2≦
1) layer on the patterned InX1Ga1-X1N layer so as to form voids from the openings. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification