Integrated micro electro-mechanical system and manufacturing method thereof

• US 20090049911A1
• Filed: 10/10/2008
• Published: 02/26/2009
• Est. Priority Date: 02/25/2005
• Status: Abandoned Application

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Yokohama, Natsuki, Fukuda, Hiroshi, Matsumura, Takafumi, Fujimori, Tsukasa, Hanaoka, Yuko
• Application Number:
  US12/285,660
• Publication Number:
  US 20090049911A1
• Time in Patent Office: Days
• US Class Current: 73/514.320
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 2201/014 by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
• CPC Class Codes: B81C 2203/0714 Forming the micromechanical structure with a CMOS process
• CPC Class Codes: B81C 2203/0742 Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit

Abstract

In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.

Claims

1. An integrated micro electromechanical system, comprising:

a semiconductor substrate;

a plurality of transistors formed on said semiconductor substrate;

an interlayer dielectric formed over said plurality of transistors;

a cavity formed in said interlayer dielectric;

an acceleration sensor formed in said cavity, and having a movable mass, a movable capacitor plate fixed to said movable mass, and a fixed capacitor plate fixed to said interlayer dielectric and opposed to said movable capacitor plate; and

an etching stopper film to which a part of an upper surface has been exposed in bottom of said cavity,

wherein said movable mass, said movable capacitor plate and said fixed capacitor plate are composed of a first interconnect layer,

wherein said etching stopper form is composed of a second interconnect layer between said plurality of transistors and said first interconnect layer, and

wherein said etching stopper film functions as an electric shield between said acceleration sensor and an integrated circuit including said plurality of transistors.

2. An integrated micro electro-mechanical system according to claim 1, further comprising:

a pad electrically connected to said transistor, composed of said first interconnect layer.

3. An integrated micro electromechanical system according to claim 1,

wherein said first interconnect layer is thicker than said second interconnect layer.

4. An integrated micro electro-mechanical system according to claim 2,

wherein said first interconnect layer is thicker than said second interconnect layer.