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SEMICONDUCTOR DEVICE HAVING SILICON CARBIDE AND CONDUCTIVE PATHWAY INTERFACE

  • US 20090050902A1
  • Filed: 10/24/2008
  • Published: 02/26/2009
  • Est. Priority Date: 11/17/1998
  • Status: Active Grant
First Claim
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1. A semiconductor device produced by the method comprising:

  • forming an interface defined by a first insulating layer comprising silicon carbide and one or more conductive pathways disposed within the first insulating layer, portions of the conductive pathways of the interface having oxidation disposed thereon;

    plasma treating the interface to remove the oxidation from the interface; and

    depositing a second insulating layer on the interface concurrently with the removal of the oxidation from the interface.

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