LIGHT-EMITTING DIODE APPARATUS AND MANUFACTURING METHOD THEREOF

• US 20090050909A1
• Filed: 07/24/2008
• Published: 02/26/2009
• Est. Priority Date: 08/20/2007
• Status: Abandoned Application

• Current Assignee: Delta Electronics Incorporated
• Original Assignee: Delta Electronics Incorporated
• Inventors: CHEN, Chao-Min, Chen, Shih-Peng, Shiue, Ching-Chuan, Chen, Huang-Kun
• Application Number:
  US12/178,975
• Publication Number:
  US 20090050909A1
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A light-emitting diode (LED) apparatus includes an epitaxial layer and an etching mask layer. The epitaxial layer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The etching mask layer is disposed on the epitaxial layer and has a plurality of hollows. The second semiconductor layer includes a roughing structure.

Claims

1. A light-emitting diode (LED) apparatus comprising:

an epitaxial layer having a first semiconductor layer, an active layer and a second semiconductor layer; and

an etching mask layer disposed on the epitaxial layer and having a plurality of hollows.

2. The LED apparatus according to claim 1, wherein a material of the etching mask layer comprises a photoresist, polymethylmethacrylate (PMMA) or anodic aluminum oxide, and the etching mask layer has a refractive index ranging between that of air and that of the epitaxial layer.

3. The LED apparatus according to claim 1, wherein one of the first and the second semiconductor layer is a P-type epitaxial layer and the other is an N-type epitaxial layer, and the second semiconductor layer comprises a roughing structure comprising at least one nano-column, nano-hole, nano-point, nano-line, a nano-concave-convex structure, periodic holes or non-periodic holes.

4. The LED apparatus according to claim 1, further comprising a substrate disposed opposite to the first semiconductor layer, wherein the substrate is an epitaxial substrate, a thermoconductive substrate, an electroconductive substrate or an insulating substrate.

5. The LED apparatus according to claim 4, wherein a material of the substrate comprises silicon, gallium arsenide, gallium phosphide, silicon carbide, boron nitride, aluminum, aluminum nitride, copper or a combination thereof.

6. The LED apparatus according to claim 4, further comprising a thermoconductive adhesive layer disposed between the substrate and the first semiconductor layer, wherein a material of the thermoconductive adhesive layer comprises gold, a solder paste, a solder-silver paste, a silver paste or a combination thereof, or a material of the thermoconductive adhesive layer comprises a pure metal, an alloy, an electroconductive material, a non-electroconductive material or an organic material.

7. The LED apparatus according to claim 4, further comprising a thermoconductive insulating layer disposed between the substrate and the first semiconductor layer, wherein a material of the thermoconductive insulating layer is aluminum nitride or silicon carbide.

8. The LED apparatus according to claim 4, further comprising a reflective layer disposed between the substrate and the first semiconductor layer, wherein the reflective layer is an optical reflective device composed of dielectric films alternately stacked by high and low refractive index layers, a metal reflective layer, a metal dielectric reflective layer or an optical reflective device composed of micro- or nano-balls, and the material of the reflective layer comprises platinum (Pt), gold (Au), silver (Ag), palladium (Pd), nickel (Ni), chromium (Cr), titanium (Ti), chromium/aluminum alloy (Cr/Al), nickel/aluminum alloy (Ni/Al), titanium/aluminum alloy (Ti/Al), titanium/silver alloy (Ti/Ag), chromium/platinum/aluminum alloy (Cr/Pt/Al) or a combination thereof.

9. The LED apparatus according to claim 4, further comprising a first current diffusing layer disposed between the substrate and the first semiconductor layer, wherein a material of the first current diffusing layer comprises indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), zinc oxide (ZnO), nickel/aluminum alloy (Ni/Au) or antimony tin oxide (ATO).

10. The LED apparatus according to claim 1, further comprising a transparent conductive layer covering a portion of the second semiconductor layer, the etching mask layer and the hollows, wherein the transparent conductive layer has a refractive index ranging between that of the epitaxial layer and that of air, and a material of the transparent conductive layer comprises indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), nickel/gold alloy (Ni/Au), zinc oxide (ZnO) or zinc gallium oxide.

11. The LED apparatus according to claim 10, further comprising a protective layer covering the transparent conductive layer, a portion of the first semiconductor layer, a portion of the active layer or a portion of the second semiconductor layer, wherein the protective layer is an anti-reflection layer, the protective layer has a refractive index ranging between that of the epitaxial layer and that of air, and a material of the protective layer comprises aluminum nitride (AlN), silicon oxide (SiO2), silicon nitride (Si3N4) or a plurality of micro- or nano-particles.

12. The LED apparatus according to claim 10, further comprising a protective layer covering the transparent conductive layer, wherein the protective layer is an anti-reflection layer, and the protective layer has a refractive index ranging between that of the epitaxial layer and that of air, and a material of the protective layer comprises aluminum nitride (AlN), silicon oxide (SiO2), silicon nitride (Si3N4) or a plurality of micro- or nano-particles.

13. The LED apparatus according to claim 1, further comprising a second current diffusing layer disposed between the etching mask layer and the second semiconductor layer, wherein the second current diffusing layer has a plurality of third hollows.

14. A manufacturing method of a light-emitting diode (LED) apparatus, comprising steps of:

forming a first semiconductor layer, an active layer and a second semiconductor layer on an epitaxial substrate in sequence; and

forming an etching mask layer on the second semiconductor layer, wherein the etching mask layer and the second semiconductor layer have a plurality of first hollows and a plurality of second hollows, respectively;

15. The method according to claim 14, further comprising steps of:

forming a transparent conductive layer on the etching mask layer, a portion of the second semiconductor layer, the first hollows and the second hollows; and

forming a protective layer on the transparent conductive layer.

16. The method according to claim 14, wherein the etching mask layer is formed on the second semiconductor layer by stacking, sintering, anodic aluminum oxidizing (AAO), nano-imprinting, hot pressing, transfer printing, etching or electron beam writer (E-beam writer) processing.

17. The method according to claim 15, wherein the second hollows and a portion of the second semiconductor layer form a roughing structure, wherein the roughing structure comprises a nano-concave-convex structure.

18. The method according to claim 15, further comprising a step of:

forming a thermoconductive insulating layer between the substrate and the first semiconductor layer, wherein a material of the thermoconductive insulating layer is aluminum nitride or silicon carbide.

19. The method according to claim 15, further comprising a step of:

forming a reflective layer between the substrate and the first semiconductor layer, wherein a material of the reflective layer comprises platinum (Pt), gold (Au), silver (Ag), palladium (Pd), nickel (Ni), chromium (Cr), titanium (Ti), chromium/aluminum alloy (Cr/Al), nickel/aluminum alloy (Ni/Al), titanium/aluminum alloy (Ti/Al), titanium/silver alloy (Ti/Ag), chromium/platinum/aluminum alloy (Cr/Pt/Al) or combinations thereof, and the reflective layer is an optical reflective device composed of dielectric films with different refraction indexes, a metal reflective layer, a metal dielectric reflective layer or an optical reflective device composed of micro- or nano-balls.

20. The method according to claim 15, further comprising a step of:

forming a thermoconductive adhesive layer between the substrate and the first semiconductor layer, wherein a material of the thermoconductive adhesive layer comprises gold, a solder paste, a solder-silver paste, a silver paste or combinations thereof, or a material of the thermoconductive adhesive layer comprises a metal, an alloy, an electroconductive material, a non-electroconductive material or an organic material.

21. The method according to claim 14, further comprising a step of:

forming a first current diffusing layer between the substrate and the first semiconductor layer, wherein a material of the current diffusing layer comprises indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), zinc oxide (ZnO), nickel/aluminum alloy (Ni/Au) or antimony tin oxide (ATO).

22. The method according to claim 14, wherein after forming the second semiconductor layer, the method further comprises a step of:

forming a second current diffusing layer between the etching mask layer and the second semiconductor layer;

or

forming a second current diffusing layer on the second semiconductor layer.

23. A manufacturing method of a light-emitting diode (LED) apparatus, comprising steps of:

forming a first semiconductor layer, an active layer and a second semiconductor layer on an epitaxial substrate in sequence;

forming a first current diffusing layer on the second semiconductor layer;

forming an etching mask layer on the first current diffusing layer, wherein the etching mask layer have a plurality of hollows; and

removing a portion of the first current diffusing layer and a portion of second semiconductor layer and a portion of the active layer to form the hollows in the first current diffusing layer and the second semiconductor layer and the active layer.

24. The method according to claim 23, wherein the etching mask layer is formed on the second semiconductor layer by stacking, sintering, anodic aluminum oxidizing (AAO), nano-imprinting, hot pressing, transfer printing, etching or electron beam writer (E-beam writer) processing.