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Zinc-blende nitride semiconductor free-standing substrate, method for fabricating same, and light-emitting device employing same

  • US 20090050928A1
  • Filed: 12/12/2007
  • Published: 02/26/2009
  • Est. Priority Date: 08/22/2007
  • Status: Active Grant
First Claim
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1. A zinc-blende nitride semiconductor free-standing substrate, comprising:

  • a zinc-blende nitride semiconductor;

    a front surface; and

    a back surface opposite the front surface,wherein a distance between the front surface and the back surface is not less than 200 μ

    m, and wherein an area ratio of the zinc-blende nitride semiconductor to the front surface is not less than 95%.

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