Stacked Trench Metal-Oxide-Semiconductor Field Effect Transistor Device
First Claim
Patent Images
1. An integrated circuit comprising:
- a drain-side-gate trench metal-oxide-semiconductor field effect transistor;
a source-side-gate trench metal-oxide-semiconductor field effect transistor; and
a metal lead coupling a drain of said source-side-gate trench metal-oxide-semiconductor field effect transistor to a source of said drain-side-gate trench metal-oxide-semiconductor field effect transistor.
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Abstract
Embodiments of the present invention are directed toward a trench metal-oxide-semiconductor field effect transistor (TMOSFET) device. The TMOSFET device includes a source-side-gate TMOSFET coupled to a drain-side-gate TMOSFET 1203. A switching node metal layer couples the drain of the source-side-gate TMOSFET to the source of the drain-side-gate TMOSFET so that the TMOSFETs are packaged as a stacked or lateral device.
74 Citations
12 Claims
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1. An integrated circuit comprising:
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a drain-side-gate trench metal-oxide-semiconductor field effect transistor; a source-side-gate trench metal-oxide-semiconductor field effect transistor; and a metal lead coupling a drain of said source-side-gate trench metal-oxide-semiconductor field effect transistor to a source of said drain-side-gate trench metal-oxide-semiconductor field effect transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A stacked trench metal-oxide-semiconductor field effect transistor device comprising:
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a first drain; a first gate disposed below said first drain; a first gate insulator is disposed about a periphery of said first gate; a first body disposed below said first drain and between said first gate insulator; a first source disposed between said first body and said first gate insulator, wherein said first source is separated from said first drain by said first body; a switching node layer disposed above said first drain; a second source disposed above said switching node; a second gate disposed above said second source; a second gate insulator is disposed about a periphery of said second gate; a second body disposed above said second source and between said second gate insulator; a second drift disposed above said second body and between said second gate insulator; and a second drain disposed above said second drift and between said second gate insulator. - View Dependent Claims (11, 12)
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Specification