SEMICONDUCTOR DEVICE
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Abstract
A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.
14 Citations
34 Claims
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1-14. -14. (canceled)
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15. A semiconductor device, comprising a MISFET, wherein
the MISFET includes: -
an active region made of a semiconductor substrate; a gate insulating film formed on the active region; a gate electrode formed on the gate insulating film; source/drain regions formed in regions of the active region located on both sides of the gate electrode; and a silicon nitride film formed over from side surfaces of the gate electrode to upper surfaces of the source/drain regions, wherein the silicon nitride film is not formed on an upper surface of the gate electrode. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34)
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Specification