luminous body

• US 20090051282A1
• Filed: 10/10/2006
• Published: 02/26/2009
• Est. Priority Date: 10/11/2005
• Status: Active Grant

• Current Assignee: Kuraray Company Limited
• Original Assignee: T Chatani Company Limited
• Inventors: Hayashi, Yoshisada, Yamauchi, Seikoh, Kanamori, Jiro, Ueda, Tadashi
• Granted Patent: US 7,862,738 B2
• Time in Patent Office: Days
• US Class Current: 313/506
• CPC Class Codes: C09K 11/876 with zinc or cadmium
• CPC Class Codes: H05B 33/14 characterised by the chemical or physical composition or the arrangement of the electroluminescent material , or by the simultaneous addition of the electroluminescent material in or onto the light source

Abstract

The present invention relates to an inorganic composition mainly containing a compound semiconductor, wherein the inorganic composition contains iridium element. The invention also relates to a method of producing an inorganic composite for producing an luminescent material, wherein the method comprises subjecting an inorganic composition mainly containing a compound semiconductor to an explosion by gunpowder and/or explosive in a sealed vessel.

An inorganic composite for producing a luminescent material can be prepared by subjecting an inorganic composition to a doping treatment such as explosive treatment or heat-treatment. The inorganic composite can further be heat-treated to produce a luminescent material. The resulting luminescent material can be formed into a layer as a light emitter layer of an inorganic EL device.

Claims

1. A method of producing an inorganic composite for producing an luminescent material, wherein the method comprises subjecting an inorganic composition mainly containing a compound semiconductor to an explosion by gunpowder and/or explosive in a sealed vessel.

2. The method of producing an inorganic composite of claim 1, wherein the inorganic composition contains iridium element.

8. A method of producing a luminescent material, wherein the method comprises heat-treating an inorganic composite obtained by the method of claim 1 or 7.

9. A luminescent material obtained by the method of claim 8.

10. An inorganic EL device using the luminescent material of claim 9.

11. An inorganic EL device comprising:

at least two electrodes; and

a light emitter layer composed of a luminescent material of claim 9, and provided between the electrodes;

wherein the brightness of the device attained during direct current driving is 10,000 cd/m² or more.

12. The inorganic EL device of claim 11, wherein the thickness of the light emitter layer is from 0.05 μ

m to 100 μ

m.

13. The inorganic EL device of claim 11 or 12, wherein the light emitter layer comprises plural light emitting layers having different compositions from each other.

3. An inorganic composition containing a compound semiconductor as a main component and iridium element.

4. The inorganic composition of claim 3, containing a transition metal, a halogen, or a rare earth element.

5. The inorganic composition of claim 3 or 4, wherein the compound semiconductor is a group II-VI compound semiconductor.

6. An inorganic composite for producing an luminescent material, which is obtained from an inorganic composition of any one of claims 3 to 5.

7. A method of producing an inorganic composite, wherein the method comprises heat-treating an inorganic composition of any one of claims 3 to 5.