Electronic Sensor

• US 20090052152A1
• Filed: 08/19/2008
• Published: 02/26/2009
• Est. Priority Date: 08/20/2007
• Status: Abandoned Application

• Current Assignee: Heraeus Sensor Technology GmbH (Heraeus Holding GMBH)
• Original Assignee: Heraeus Sensor Technology GmbH (Heraeus Holding GMBH)
• Inventors: ULLRICH, Karlheinz, WIENAND, Karlheinz
• Application Number:
  US12/193,799
• Publication Number:
  US 20090052152A1
• Time in Patent Office: Days
• US Class Current: 361/811
• CPC Class Codes: G01N 27/12 of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid , for detecting components in the fluid

Abstract

A high-temperature platform chip has at least three electrodes on an electrically insulating substrate constructed as a heating plate with a heat conductor on the back side.

Claims

1. A high-temperature platform chip, comprising at least three electrodes of arranged on an electrically insulating substrate, the substrate having a form of a heating plate with a heat conductor on its back side.

2. The high-temperature platform chip according to claim 1, wherein the electrodes are arranged in such a way that when the heating plate is heated by a heater on the back side to 600°

C. to 800°

C., a temperature difference among the electrodes equals less than 10°

C.

3. The high-temperature platform chip according to claim 1, wherein the platform chip has a temperature measurement resistor.

4. The high-temperature platform chip according to claim 3, wherein a chip is arranged on the heating plate, and the electrodes and optionally the temperature measurement resistor are applied to the chip in thin-film technology (chip-on-board technology).

5. A high-temperature multi-metal-oxide sensor chip having a multi-metal-oxide sensor arrangement, the chip comprising at least three electrodes arranged as metal oxide sensor layers on an electrically insulating substrate in a form of a heating plate with a heat conductor on its back side.

6. The high-temperature multi-metal-oxide sensor chip according to claim 5, wherein, when heating the heating plate by a heat conductor on the back side to 700°

C. to 800°

C., a temperature difference among the metal oxide sensor layers equals less than 10°

C.