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Semiconductor device

  • US 20090057416A1
  • Filed: 05/25/2006
  • Published: 03/05/2009
  • Est. Priority Date: 05/30/2005
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising a resonance circuit, said resonance circuit comprising:

  • an N-type MOS capacitor element that has a threshold voltage in the range of −

    0.1 V to −

    24V; and

    an antenna electrically connected to the N-type MOS capacitor element,wherein an absolute value of the threshold voltage of the N-type MOS capacitor element is in the range of half of a minimum operation power supply voltage to twice a maximum operation power supply voltage, andwherein data is wirelessly transmitted and received through the antenna.

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