Nanoparticle Semiconductor Device and Method for Fabricating

• US 20090057662A1
• Filed: 08/29/2007
• Published: 03/05/2009
• Est. Priority Date: 08/29/2007
• Status: Abandoned Application

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: McClure, Dale R., Zhang, Jie, Skipor, Andrew F., Gamota, Daniel R., Brazis, Paul W.
• Application Number:
  US11/846,805
• Publication Number:
  US 20090057662A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02521 Materials
• CPC Class Codes: H01L 21/02601 Nanoparticles fullerenes H10K85/211
• CPC Class Codes: H01L 21/02628 using solutions

Abstract

A low-temperature process for creating a semiconductive device by printing a liquid composition containing semiconducting nanoparticles. The semiconductive device is formed on a polymeric substrate by printing a composition that contains nanoparticles of inorganic semiconductor suspended in a carrier, using a graphic arts printing method. The printed deposit is then heated to remove substantially all of the carrier from the printed deposit. The low-temperature process does not heat the substrate or the printed deposit above 300° C. The mobility of the resulting semiconductive device is between about 10 cm²/Vs and 200 cm²/Vs.

Claims

1. A low-temperature process for creating a semiconductive device by printing a liquid composition containing semiconducting nanoparticles, comprising:

providing a polymeric substrate;

providing a printable composition comprising nanoparticles of inorganic semiconductor suspended in a carrier;

printing the printable composition on the polymeric substrate using a graphic arts printing method, so as to form a printed deposit of the composition;

substantially removing the carrier from the printed deposit; and

wherein the low-temperature process does not comprise heating the printed deposit above 300°

C.

2. The process as described in claim 1, wherein substantially removing the carrier comprises heating the printed deposit at a temperature less than or equal to 150°

C.

3. The process as described in claim 1, wherein the nanoparticles of inorganic semiconductor comprise particle sizes less than 100 nanometers.

4. The process as described in claim 3, wherein the nanoparticles of inorganic semiconductor comprise particle sizes substantially 20 nanometers.

5. The process as described in claim 1, wherein providing a printable composition comprises providing nanoparticles of one or more inorganic semiconducting materials selected from the group consisting of elements from the Periodic Table of the Elements Group IV, binary Group III-V, binary Group II-VI, or combinations thereof.

6. The process as described in claim 1, wherein providing a printable composition comprises providing nanoparticles of inorganic semiconductor suspended in one or more carriers selected from the group consisting of primary alkyl alcohols, alkyl diols, alkyl polyols, water, alkyl glycol ethers, and alkyl glycol acetates.

7. The process as described in claim 1, wherein a graphic arts printing method comprises one or more methods selected from the group consisting of spin coating, roller coating, curtain coating, spraying, gravure printing, screen printing, inkjet printing, flexo printing, offset lithography printing, and microdispensing.

8. The process as described in claim 1, wherein the ratio of the largest dimension to the smallest dimension of the nanoparticles is between 1.0 and about 1.5.

9. The process as described in claim 1, wherein printing the printable composition comprises printing a predetermined pattern.

10. The process as described in claim 1, wherein the surface of the nanoparticles is not modified with organic or inorganic compounds.

11. The process as described in claim 1, wherein the mobility of the semiconductive device is between about 10 cm²/Vs and 200 cm²/Vs.

12. A low-temperature process for creating a semiconductive device by printing a liquid composition containing semiconducting nanoparticles, comprising:

providing an electrically insulating substrate;

providing a printable composition comprising nanoparticles less than 100 nanometers of one or more inorganic semiconductors selected from the group consisting of elements from the Periodic Table of the Elements Group IV, binary Group III-V, binary Group II-VI, and combinations, compounds, or alloys thereof suspended in a carrier comprising one or more solvents selected from the group consisting of primary alkyl alcohols, alkyl diols, alkyl polyols, water, alkyl glycol ethers, and alkyl glycol acetates;

printing the printable composition on the insulating substrate using a graphic arts printing technique, so as to form a printed deposit of the composition in a predetermined pattern; and

substantially removing the carrier from the printed deposit by heating the printed deposit at a temperature not to exceed 150°

C.

13. The process as described in claim 12, wherein the nanoparticles of inorganic semiconductor comprise particle sizes substantially 20 nanometers.

14. The process as described in claim 12, wherein a graphic arts printing technique comprises one or more techniques selected from the group consisting of spin coating, roller coating, curtain coating, spraying, gravure printing, screen printing, inkjet printing, flexo printing, offset lithography printing, and microdispensing.

15. The process as described in claim 12, wherein the ratio of the largest dimension to the smallest dimension of the nanoparticles is between 1.0 and about 1.5.

16. An inorganic semiconductive device formed on a polymeric substrate, comprising a substrate having nanoparticles of inorganic semiconductor printed in a predetermined pattern using a graphic arts printing technique, wherein the mobility of the inorganic semiconductive device is between about 10 cm²/Vs and 200 cm²/Vs.

17. The inorganic semiconductive device as described in claim 16, wherein nanoparticles of inorganic semiconductor comprises one or more inorganic semiconducting materials selected from the group consisting of elements from the Periodic Table of the Elements Group IV, binary Group III-V, binary Group II-VI, or combinations thereof.

18. The inorganic semiconductive device as described in claim 16, wherein the nanoparticles of inorganic semiconductor range between about 20 and about 100 nanometers in diameter.

19. The inorganic semiconductive device as described in claim 16, wherein the substrate comprises a polymeric or paper substrate.

20. The inorganic semiconductive device as described in claim 16, wherein the inorganic semiconductive device is a field-effect transistor.