E-BEAM INSPECTION STRUCTURE FOR LEAKAGE ANALYSIS
First Claim
1. A testing structure comprised of at least two different test structures, each of the at least two different test structures exhibit a discernable defect characteristic upon voltage contrast (VC) scanning when any test structure that exhibits the discernable defect characteristic has at least one predetermined structural defect.
1 Assignment
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Accused Products
Abstract
A testing structure, and method of using the testing structure, where the testing structure comprised of at least one of eight test structures that exhibits a discernable defect characteristic upon voltage contrast scanning when it has at least one predetermined structural defect. The eight test structures being: 1) having an Active Area (AA)/P-N junction leakage; 2) having an isolation region to ground; 3) having an AA/P-N junction and isolation region; 4) having a gate dielectric leakage and gate to isolation region to ground; 5) having a gate dielectric leakage through AA/P-N junction to ground leakage; 6) having a gate dielectric to ground and gate/ one side isolation region leakage to ground; 7) having an oversized gate dielectric through AA/P-N junction to ground leakage; and 8) having an AA/P-N junction leakage gate dielectric leakage.
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Citations
21 Claims
- 1. A testing structure comprised of at least two different test structures, each of the at least two different test structures exhibit a discernable defect characteristic upon voltage contrast (VC) scanning when any test structure that exhibits the discernable defect characteristic has at least one predetermined structural defect.
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4. A testing structure comprised of at least one test structure, the at least one test structure exhibits a discernable defect characteristic upon voltage contrast (VC) scanning when any test structure that exhibits the discernable defect characteristic has at least one predetermined structural defect;
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the at least one test structure is selected from the following first through eighth test structures; 1) a first test structure having an Active Area (AA)/P-N junction leakage test structure; 2) a second test structure having an isolation region to ground test structure; 3) a third test structure having an AA/P-N junction and isolation region test structure; 4) a fourth test structure having a gate dielectric leakage and gate to isolation region to ground test structure; 5) a fifth test structure having a gate dielectric leakage through AA/P-N junction to ground leakage test structure; 6) a sixth test structure having a gate dielectric to ground and gate/one side isolation region leakage to ground test structure; 7) a seventh test structure having an oversized gate dielectric through AA/P-N junction to ground leakage test structure; and 8) an eighth test structure having an AA/P-N junction leakage gate dielectric leakage test structure. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 12)
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13. A test method comprised of:
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providing at least one test structure over a substrate, the at least one test structure being selected from the following first through eighth test structures; 1) a first test structure having an Active Area (AA)/P-N junction leakage test structure; 2) a second test structure having an isolation region to ground test structure; 3) a third test structure having an AA/P-N junction and isolation region test structure; 4) a fourth test structure having a gate dielectric leakage and gate to isolation region to ground test structure; 5) a fifth test structure having a gate dielectric leakage through AA/P-N junction to ground leakage test structure; 6) a sixth test structure having a gate dielectric to ground and gate/one side isolation region leakage to ground test structure; 7) a seventh test structure having an oversized gate dielectric through AA/P-N junction to ground leakage test structure; and 8) an eighth test structure having an AA/P-N junction leakage gate dielectric leakage test structure; and scanning the at least one test structure with an electronic beam to detect defects in the at least one test structure. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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21. A method of forming ICs comprising:
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providing a test structure which detects various types of leakage defects, the test structure capable of quantifying magnitude of leakage based on grey scale; differentiating killer leakage defects; determining a solution for the killer defects; and fabricating ICs incorporating the solution.
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Specification