Display device and electronic appliance including the display device

• US 20090057675A1
• Filed: 08/27/2008
• Published: 03/05/2009
• Est. Priority Date: 08/29/2007
• Status: Abandoned Application

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Application Number:
  US12/230,332
• Publication Number:
  US 20090057675A1
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1229 with different crystal properties within a device or between different devices
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate

Abstract

To provide a display device which has a narrower frame region and which includes a driver circuit not affected by variation in transistor characteristics. A base substrate having an insulating surface to which a single-crystal semiconductor layer is attached is divided into strips and is used for a driver circuit of a display device. Alternatively, a base substrate having an insulating surface to which a plurality of single-crystal semiconductor layers is attached is divided into strips and is used for a driver circuit of a display device. Accordingly, a driver circuit corresponding to a size of a display device can be used for the display device, and a display device which has a narrower frame region and which includes a driver circuit not affected by variation in transistor characteristics can be provided.

Claims

1. A display device comprising:

a base substrate; and

a driver circuit including, over the base substrate, a plurality of thin film transistors manufactured using semiconductor films,

wherein the semiconductor films are obtained in such a manner that the semiconductor films are separated from a single-crystal semiconductor substrate and are attached and bonded a plurality of times,

wherein the base substrate having the driver circuit is mounted on a substrate having a pixel portion.

2. The display device according to claim 1, wherein the semiconductor films separated from the single-crystal semiconductor substrate are obtained by performing heat treatment on a defect layer obtained by introduction of hydrogen, a hydrogen ion, a rare gas, or a rare gas ion.

3. The display device according to claim 1, wherein the single-crystal semiconductor substrate is a single-crystal semiconductor substrate of silicon, silicon germanium, gallium arsenide, or indium phosphide.

4. The display device according to claim 1, wherein the semiconductor films separated from the single-crystal semiconductor substrate are attached and bonded to the base substrate in a longitudinal direction of the driver circuit.

5. The display device according to claim 1, wherein the base substrate is a polycrystalline semiconductor substrate or a metal substrate.

6. The display device according to claim 1, wherein the display device is a liquid crystal display device, a light-emitting device in which an organic light-emitting device is provided in each pixel, a digital micromirror device, a plasma display panel, a field emission display, or a display device in which a circuit element using a semiconductor film is included in a driver circuit.

7. The display device according to claim 1, wherein the display device is provided in an electronic appliance selected from at least one of:

a personal computer, a laptop computer, a DVD, a cellular phone, a portable game machine, an electronic book, a video camera, a digital still camera, a head mount display, a navigation system, a car audio system, a home-use game console, a TV broadcast reception display, and an advertisement display.

8. A display device comprising:

a base substrate; and

a driver circuit including, over the base substrate, a plurality of thin film transistors manufactured using semiconductor films,

wherein the semiconductor films are obtained in such a manner that a plurality of first semiconductor films separated from a first single-crystal semiconductor substrate and a plurality of second semiconductor films separated from a second single-crystal semiconductor substrate are attached and bonded a plurality of times,

wherein the first single-crystal semiconductor substrate has a plurality of first projections at which the first semiconductor films are separated and the second single-crystal semiconductor substrate has a plurality of second projections at which the second semiconductor films are separated,

wherein the second semiconductor films have different crystal plane orientation from the first semiconductor films, and

wherein the base substrate having the driver circuit is mounted on a substrate having a pixel portion.

9. The display device according to claim 8, wherein the first semiconductor films and the second semiconductor films are obtained by being separated from the first single-crystal semiconductor substrate and the second single-crystal semiconductor substrate in such a manner that thermal treatment is performed on a defect layer formed in the first single-crystal semiconductor substrate and the second single-crystal semiconductor substrate by introduction of hydrogen, a hydrogen ion, a rare gas, or a rare gas ion.

10. The display device according to claim 8, wherein each of the first single-crystal semiconductor substrate and the second single-crystal semiconductor substrate is a single-crystal semiconductor substrate of silicon, silicon germanium, gallium arsenide, or indium phosphide.

11. The display device according to claim 8, wherein the first semiconductor films and the second semiconductor films obtained by being separated from the first single-crystal semiconductor substrate and the second single-crystal semiconductor substrate are attached and bonded to the base substrate in a longitudinal direction of the driver circuit.

12. The display device according to claim 8, wherein the base substrate is a polycrystalline semiconductor substrate or a metal substrate.

13. The display device according to claim 8, wherein the display device is a liquid crystal display device, a light-emitting device in which an organic light-emitting device is provided in each pixel, a digital micromirror device, a plasma display panel, a field emission display, or a display device in which a circuit element using a semiconductor film is included in a driver circuit.

14. The display device according to claim 8, wherein the display device is provided in an electronic appliance selected from at least one of:

a personal computer, a laptop computer, a DVD, a cellular phone, a portable game machine, an electronic book, a video camera, a digital still camera, a head mount display, a navigation system, a car audio system, a home-use game console, a TV broadcast reception display, and an advertisement display.

15. A method of manufacturing a display device comprising:

separating a single-crystal semiconductor substrate so as to form a first single-crystal semiconductor film;

attaching the first single-crystal semiconductor film to a base substrate;

separating the single-crystal semiconductor substrate so as to form a second single-crystal semiconductor film;

attaching the second single-crystal semiconductor film to the base substrate;

forming a driver circuit comprising a plurality of thin film transistors by using at least the first single-crystal semiconductor film and the second single-crystal semiconductor film attached to the base substrate;

dividing the base substrate into an elongated substrate having the driver circuit; and

attaching the elongated substrate having the driver circuit to a substrate having a pixel portion.

16. The method of manufacturing a display device according to claim 15, wherein the first single-crystal semiconductor film and the second single-crystal semiconductor film are separated from the single-crystal semiconductor substrate by performing heat treatments on defect layers formed in the single-crystal semiconductor substrate by introduction of hydrogen, a hydrogen ion, a rare gas, or a rare gas ion.

17. The method of manufacturing a display device according to claim 15, wherein the single-crystal semiconductor substrate is a single-crystal semiconductor substrate of silicon, silicon germanium, gallium arsenide, or indium phosphide.

18. The method of manufacturing a display device according to claim 15, wherein the first single-crystal semiconductor film and the second single-crystal semiconductor film separated from the single-crystal semiconductor substrate are attached and bonded to the base substrate in a longitudinal direction of the driver circuit.

19. The method of manufacturing a display device according to claim 15, wherein the base substrate is a polycrystalline semiconductor substrate or a metal substrate.

20. The method of manufacturing a display device according to claim 15, wherein the display device is a liquid crystal display device, a light-emitting device in which an organic light-emitting device is provided in each pixel, a digital micromirror device, a plasma display panel, a field emission display, or a display device in which a circuit element using a semiconductor film is included in a driver circuit.

21. The method of manufacturing a display device according to claim 15, wherein the display device is provided in an electronic appliance selected from at least one of:

a personal computer, a laptop computer, a DVD, a cellular phone, a portable game machine, an electronic book, a video camera, a digital still camera, a head mount display, a navigation system, a car audio system, a home-use game console, a TV broadcast reception display, and an advertisement display.

22. A method of manufacturing a display device comprising:

forming a first defect layer in a first single-crystal semiconductor substrate;

separating the first single-crystal semiconductor substrate so as to form a first single-crystal semiconductor film;

attaching the first single-crystal semiconductor film to a base substrate;

forming a second defect layer in a second single-crystal semiconductor substrate;

separating the second single-crystal semiconductor substrate so as to form a second single-crystal semiconductor film;

attaching the second single-crystal semiconductor film to the base substrate;

forming a driver circuit comprising at least a first thin film transistor by using the first single crystal semiconductor film and at least a second thin film transistor by using the second single crystal semiconductor film;

dividing the base substrate into an elongated substrate having the driver circuit; and

attaching the elongated substrate having the driver circuit to a substrate having a pixel portion,

wherein the first thin film transistor and the second thin film transistor have different crystal plane orientation.

23. The method of manufacturing a display device according to claim 22, wherein a first plurality of thin film transistor are formed by using the first single crystal semiconductor film and a second plurality of thin film transistor are formed by using the second single crystal semiconductor film.

24. The method of manufacturing a display device according to claim 22, wherein the first defect layer and the second defect layer are formed by introduction of hydrogen, a hydrogen ion, a rare gas, or a rare gas ion.

25. The method of manufacturing a display device according to claim 22, wherein thermal treatment is performed to separate the first single-crystal semiconductor substrate at the first defect layer and the second single-crystal semiconductor substrate at the second defect layer.

26. The method of manufacturing a display device according to claim 22, wherein each of the first single-crystal semiconductor substrate and the second single-crystal semiconductor substrate is a single-crystal semiconductor substrate of silicon, silicon germanium, gallium arsenide or indium phosphide.

27. The method of manufacturing a display device according to claim 22, wherein the first single-crystal semiconductor film and the second single-crystal semiconductor film are attached and bonded to the base substrate in a longitudinal direction of the driver circuit.

28. The method of manufacturing a display device according to claim 22, wherein the base substrate is a polycrystalline semiconductor substrate or a metal substrate.

29. The method of manufacturing a display device according to claim 22, wherein the display device is a liquid crystal display device, a light-emitting device in which an organic light-emitting device is provided in each pixel, a digital micromirror device, a plasma display panel, a field emission display, or a display device in which a circuit element using a semiconductor film is included in a driver circuit.

30. The method of manufacturing a display device according to claim 22, wherein the display device is provided in an electronic appliance selected from at least one of:

a personal computer, a laptop computer, a DVD, a cellular phone, a portable game machine, an electronic book, a video camera, a digital still camera, a head mount display, a navigation system, a car audio system, a home-use game console, a TV broadcast reception display, and an advertisement display.