Semiconductor Device and Method of Manufacturing The Semiconductor Device

• US 20090057683A1
• Filed: 10/24/2008
• Published: 03/05/2009
• Est. Priority Date: 08/12/1999
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Nakajima, Setsuo, Arai, Yasuyuki
• Granted Patent: US 8,003,989 B2
• Time in Patent Office: Days
• US Class Current: 257/72
• CPC Class Codes: G02F 1/1345 Conductors connecting electrodes to cell terminals
• CPC Class Codes: G02F 1/136231 for reducing the number of lithographic steps
• CPC Class Codes: G02F 1/13629 Multilayer wirings
• CPC Class Codes: G02F 1/136295 Materials; Compositions; Manufacture processes
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/511 with a compositional variation, e.g. multilayer structures H01L29/516 takes precedence
• CPC Class Codes: H01L 29/78669 with inverted-type structure, e.g. with bottom gate

Abstract

In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.

Claims

1-24. -24. (canceled)

25. A display device comprising:

a gate wiring and a first conductive layer, each comprising a first conductive material, over a substrate;

a first insulating film formed over the gate wiring and the first conductive layer;

a semiconductor film including a channel region formed over the first insulating film;

a source region and a drain region formed over the semiconductor film;

a source wiring and a drain wiring formed over the source region and the drain region, respectively;

a second conductive layer formed over the first insulating film wherein each of the source wiring, the drain wiring and the second conductive layer comprising a second conductive material;

a second insulating film comprising an inorganic material formed over the gate wiring, the first conductive layer, the semiconductor film, the source region, the drain region, the source wiring, the drain wiring and the second conductive layer;

a pixel electrode formed over the second insulating film and electrically connected to the drain wiring through an opening of the second insulating film; and

a third conductive layer formed over the second insulating film wherein the third conductive layer is in contact with a top surface and a side surface of the first conductive layer and a top surface and a side surface of the second conductive layer so that the first conductive layer and the second conductive layer are electrically connected to each other,

wherein each of the pixel electrode and the third conductive layer comprises a transparent conductive oxide material.

29. The display device according to claim 25, wherein the gate wiring and the first conductive layer are apart form each other.

33. The display device according to claim 25, wherein the first insulating film is a gate insulating film having a lamination structure.

37. The display device according to claim 25, wherein the semiconductor film is an amorphous silicon hydride film or a micro-crystal semiconductor film.

41. The display device according to claim 25, wherein the first conductive layer and the second conductive layer are electrically connected to each other through the third conductive layer at a portion around a pixel portion.

45. The display device according to claim 41, wherein the portion around the pixel portion is an input terminal portion.

49. The display device according to claim 25, wherein the transparent conductive oxide material is ITO.

53. The display device according to claim 25, wherein each of the gate wiring and the first conductive layer has a taper end portion.

54. The display device according to claim 53, wherein an angle of the taper end portion of the gate wiring is 1 to 20°

and an angle of the taper end portion of the first conductive layer is 1 to 20°

.

61. The display device according to claim 25, wherein the second insulating film is in contact with a top surface of the semiconductor film between the source wiring and the drain wiring.

65. The display device according to claim 25, wherein the second insulating film and the first insulating film are removed so as to expose the top surface of the second conductive layer and the top surface of the first conductive layer.

26. A display device comprising:

a gate wiring and a first conductive layer, each comprising a first conductive material, over a substrate;

a first insulating film formed over the gate wiring and the first conductive layer;

a semiconductor film including a channel region formed over the first insulating film;

a source region and a drain region formed over the semiconductor film;

a source wiring and a drain wiring formed over the source region and the drain region, respectively;

a second conductive layer formed over the first insulating film wherein each of the source wiring, the drain wiring and the second conductive layer comprising a second conductive material;

a second insulating film comprising an inorganic material formed over the gate wiring, the first conductive layer, the semiconductor film, the source region, the drain region, the source wiring, the drain wiring and the second conductive layer;

a third insulating film comprising an organic resin formed over the second insulating film;

a pixel electrode formed over the third insulating film and electrically connected to the drain wiring through an opening of the second insulating film and an opening of the third insulating film; and

a third conductive layer formed over the third insulating film wherein the third conductive layer is in contact with a top surface and a side surface of the first conductive layer and a top surface and a side surface of the second conductive layer so that the first conductive layer and the second conductive layer are electrically connected to each other,

wherein each of the pixel electrode and the third conductive layer comprises a transparent conductive oxide material.

30. The display device according to claim 26, wherein the gate wiring and the first conductive layer are apart form each other.

34. The display device according to claim 26, wherein the first insulating film is a gate insulating film having a lamination structure.

38. The display device according to claim 26, wherein the semiconductor film is an amorphous silicon hydride film or a micro-crystal semiconductor film.

42. The display device according to claim 26, wherein the first conductive layer and the second conductive layer are electrically connected to each other through the third conductive layer at a portion around a pixel portion.

46. The display device according to claim 42, wherein the portion around the pixel portion is an input terminal portion.

50. The display device according to claim 26, wherein the transparent conductive oxide material is ITO.

55. The display device according to claim 26, wherein each of the gate wiring and the first conductive layer has a taper end portion.

56. The display device according to claim 55, wherein an angle of the taper end portion of the gate wiring is 1 to 20°

and an angle of the taper end portion of the first conductive layer is 1 to 20°

.

62. The display device according to claim 26, wherein the second insulating film is in contact with a top surface of the semiconductor film between the source wiring and the drain wiring.

66. The display device according to claim 26, wherein the third insulating film, the second insulating film and the first insulating film are removed so as to expose the top surface of the second conductive layer and the top surface of the first conductive layer.

27. A display device comprising:

a gate wiring, a first conductive layer and a storage capacitor wiring, each comprising a first conductive material, over a substrate;

a first insulating film formed over the gate wiring, the first conductive layer and the storage capacitor wiring;

a semiconductor film including a channel region formed over the first insulating film;

a source region and a drain region formed over the semiconductor film;

a source wiring and a drain wiring formed over the source region and the drain region, respectively;

a second conductive layer formed over the first insulating film wherein each of the source wiring, the drain wiring and the second conductive layer comprising a second conductive material;

a second insulating film comprising an inorganic material formed over the gate wiring, the first conductive layer, the storage capacitor wiring, the semiconductor film, the source region, the drain region, the source wiring, the drain wiring and the second conductive layer;

a pixel electrode formed over the second insulating film and electrically connected to the drain wiring through an opening of the second insulating film; and

a third conductive layer formed over the second insulating film wherein the third conductive layer is in contact with a top surface and a side surface of the first conductive layer and a top surface and a side surface of the second conductive layer so that the first conductive layer and the second conductive layer are electrically connected to each other,

wherein each of the pixel electrode and the third conductive layer comprises a transparent conductive oxide material.

31. The display device according to claim 27, wherein the gate wiring, the first conductive layer and the storage capacitor wiring are apart form among them.

35. The display device according to claim 27, wherein the first insulating film is a gate insulating film having a lamination structure.

39. The display device according to claim 27, wherein the semiconductor film is an amorphous silicon hydride film or a micro-crystal semiconductor film.

43. The display device according to claim 27, wherein the first conductive layer and the second conductive layer are electrically connected to each other through the third conductive layer at a portion around a pixel portion.

47. The display device according to claim 43, wherein the portion around the pixel portion is an input terminal portion.

51. The display device according to claim 27, wherein the transparent conductive oxide material is ITO.

57. The display device according to claim 27, wherein each of the gate wiring, the first conductive layer and the storage capacitor wiring has a taper end portion.

58. The display device according to claim 57, wherein an angle of the taper end portion of the gate wiring is 1 to 20°

, an angle of the taper end portion of the first conductive layer is 1 to 20°

, and an angle of the taper end portion of the storage capacitor wiring is 1 to 20°

.

63. The display device according to claim 27, wherein the second insulating film is in contact with a top surface of the semiconductor film between the source wiring and the drain wiring.

67. The display device according to claim 27, wherein the second insulating film and the first insulating film are removed so as to expose the top surface of the second conductive layer and the top surface of the first conductive layer.

28. A display device comprising:

a gate wiring, a first conductive layer and a storage capacitor wiring, each comprising a first conductive material, over a substrate;

a first insulating film formed over the gate wiring, the first conductive layer and the storage capacitor wiring;

a semiconductor film including a channel region formed over the first insulating film;

a source region and a drain region formed over the semiconductor film;

a source wiring and a drain wiring formed over the source region and the drain region, respectively;

a second conductive layer formed over the first insulating film wherein each of the source wiring, the drain wiring and the second conductive layer comprising a second conductive material;

a second insulating film comprising an inorganic material formed over the gate wiring, the first conductive layer, the storage capacitor wiring, the semiconductor film, the source region, the drain region, the source wiring, the drain wiring and the second conductive layer;

a third insulating film comprising an organic resin formed over the second insulating film;

a pixel electrode formed over the third insulating film and electrically connected to the drain wiring through an opening of the second insulating film and an opening of the third insulating film; and

a third conductive layer formed over the third insulating film wherein the third conductive layer is in contact with a top surface and a side surface of the first conductive layer and a top surface and a side surface of the second conductive layer so that the first conductive layer and the second conductive layer are electrically connected to each other,

wherein each of the pixel electrode and the third conductive layer comprises a transparent conductive oxide material.

32. The display device according to claim 28, wherein the gate wiring, the first conductive layer and the storage capacitor wiring are apart form among them.

36. The display device according to claim 28, wherein the first insulating film is a gate insulating film having a lamination structure.

40. The display device according to claim 28, wherein the semiconductor film is an amorphous silicon hydride film or a micro-crystal semiconductor film.

44. The display device according to claim 28, wherein the first conductive layer and the second conductive layer are electrically connected to each other through the third conductive layer at a portion around a pixel portion.

48. The display device according to claim 44, wherein the portion around the pixel portion is an input terminal portion.

52. The display device according to claim 28, wherein the transparent conductive oxide material is ITO.

59. The display device according to claim 28, wherein each of the gate wiring, the first conductive layer and the storage capacitor wiring has a taper end portion.

60. The display device according to claim 59, wherein an angle of the taper end portion of the gate wiring is 1 to 20°

, an angle of the taper end portion of the first conductive layer is 1 to 20°

, and an angle of the taper end portion of the storage capacitor wiring is 1 to 20°

.

64. The display device according to claim 28, wherein the second insulating film is in contact with a top surface of the semiconductor film between the source wiring and the drain wiring.

68. The display device according to claim 28, wherein the third insulating film, the second insulating film and the first insulating film are removed so as to expose the top surface of the second conductive layer and the top surface of the first conductive layer.