CMOS VARACTOR
First Claim
1. A varactor, comprising:
- a substrate comprising a single-crystal upper silicon layer separated from a lower silicon layer by a buried oxide layer;
dielectric isolation abutting sidewalls of a region of said upper silicon layer and thereby defining a body in said upper silicon layer, said dielectric isolation extending from a top surface of said substrate to a top surface of said buried oxide layer;
a polysilicon electrode comprising a gate region and a plate region separated from said body by a gate dielectric layer, said gate and plate regions contiguous, said electrode electrically connected to a first pad; and
a source formed in said body on a first side of said gate region, a drain formed in said body on a second and opposite side of said gate region, and a body contact formed in said body on a side of said plate region away from said gate region, said source, drain and body contact, separated from each other by regions of said body under said electrode, said source, drain and body contact electrically connected to each other and to a second pad.
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Accused Products
Abstract
A varactor and method of fabricating the varactor. The varactor includes a silicon body in a silicon layer of an SOI substrate; a polysilicon electrode comprising a gate region and a plate region separated from the body by a gate dielectric layer, the gate and plate regions contiguous, the electrode electrically connected to a first pad; and a source formed in the body on a first side of the gate region, a drain formed in the body on a second and opposite side of the gate region, and a body contact formed in the body on a side of the plate region away from the gate region, the source, drain and body contact, separated from each other by regions of the body under the electrode, the source, drain and body contact electrically connected to each other and to a second pad.
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Citations
14 Claims
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1. A varactor, comprising:
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a substrate comprising a single-crystal upper silicon layer separated from a lower silicon layer by a buried oxide layer; dielectric isolation abutting sidewalls of a region of said upper silicon layer and thereby defining a body in said upper silicon layer, said dielectric isolation extending from a top surface of said substrate to a top surface of said buried oxide layer; a polysilicon electrode comprising a gate region and a plate region separated from said body by a gate dielectric layer, said gate and plate regions contiguous, said electrode electrically connected to a first pad; and a source formed in said body on a first side of said gate region, a drain formed in said body on a second and opposite side of said gate region, and a body contact formed in said body on a side of said plate region away from said gate region, said source, drain and body contact, separated from each other by regions of said body under said electrode, said source, drain and body contact electrically connected to each other and to a second pad. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of fabricating a varactor, comprising:
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forming dielectric isolation abutting sidewalls of a region of a single crystal upper silicon layer of a substrate and thereby defining a body in said upper silicon layer, said substrate comprising said upper silicon layer separated from a lower silicon layer by a buried oxide layer, said dielectric isolation extending from a top surface of said substrate to a top surface of said buried oxide layer; forming a polysilicon electrode comprising a gate region and a plate region separated from said body by a gate dielectric layer, said gate and plate regions contiguous; electrically connecting said electrode to a first pad; forming a source in said body on a first side of said gate region, a drain in said body on a second and opposite side of said gate region, and a body contact in said body on a side of said plate region away from said gate region, said source, drain and body contact, separated from each other by regions of said body under said electrode; and electrically connecting said source, drain and body contact to each other and to a second pad. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification