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CMOS VARACTOR

  • US 20090057742A1
  • Filed: 08/30/2007
  • Published: 03/05/2009
  • Est. Priority Date: 08/30/2007
  • Status: Abandoned Application
First Claim
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1. A varactor, comprising:

  • a substrate comprising a single-crystal upper silicon layer separated from a lower silicon layer by a buried oxide layer;

    dielectric isolation abutting sidewalls of a region of said upper silicon layer and thereby defining a body in said upper silicon layer, said dielectric isolation extending from a top surface of said substrate to a top surface of said buried oxide layer;

    a polysilicon electrode comprising a gate region and a plate region separated from said body by a gate dielectric layer, said gate and plate regions contiguous, said electrode electrically connected to a first pad; and

    a source formed in said body on a first side of said gate region, a drain formed in said body on a second and opposite side of said gate region, and a body contact formed in said body on a side of said plate region away from said gate region, said source, drain and body contact, separated from each other by regions of said body under said electrode, said source, drain and body contact electrically connected to each other and to a second pad.

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