Trench MOSFET with Trench Termination and manufacture thereof
First Claim
1. A trench MOSFET with a trench termination, comprising:
- a substrate comprising a drain region which is strongly doped and a doping epi layer region, which is weekly doped the same type as the drain region, on the drain region;
a plurality of source and body regions formed in the epi layer;
a metal layer comprising a plurality of metal layer regions which are connected to respective source and body, and gate regions forming metal connections of the MOSFET;
a plurality of metal contact plugs connected to respective metal layer regions;
a plurality of gate trenches filled with polysilicon to form a plurality of trenched gates on top of epi layer;
an insulating layer deposited on the epi layer formed underneath the metal layer with a plurality of metal contact holes therein for contacting respective source and body regions;
a margin terminating gate trench which is around the gate trenches; and
a margin terminating active region which is formed underneath the margin terminating gate trench.
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Accused Products
Abstract
A trench MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) with a trench termination, including a substrate including a drain region which is strongly doped and a doping epi layer region, which is weekly doped the same type as the drain region, on the drain region; a plurality of source and body regions formed in the epi layer; a metal layer including a plurality of metal layer regions which are connected to respective source and body, and gate regions forming metal connections of the MOSFET; a plurality of metal contact plugs connected to respective metal layer regions; a plurality of gate trenches filled with polysilicon to form a plurality of trenched gates on top of epi layer; an insulating layer deposited on the epi layer formed underneath the metal layer with a plurality of metal contact holes therein for contacting respective source and body regions; a margin terminating gate trench which is around the gate trenches; and a margin terminating active region which is formed underneath the margin terminating gate trench.
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Citations
12 Claims
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1. A trench MOSFET with a trench termination, comprising:
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a substrate comprising a drain region which is strongly doped and a doping epi layer region, which is weekly doped the same type as the drain region, on the drain region; a plurality of source and body regions formed in the epi layer; a metal layer comprising a plurality of metal layer regions which are connected to respective source and body, and gate regions forming metal connections of the MOSFET; a plurality of metal contact plugs connected to respective metal layer regions; a plurality of gate trenches filled with polysilicon to form a plurality of trenched gates on top of epi layer; an insulating layer deposited on the epi layer formed underneath the metal layer with a plurality of metal contact holes therein for contacting respective source and body regions; a margin terminating gate trench which is around the gate trenches; and a margin terminating active region which is formed underneath the margin terminating gate trench. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for manufacturing a trench MOSFET with a trench termination, comprising the following steps:
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providing an epi layer on heavily doped substrate; forming a plurality of trenches in the epi layer; covering a gate oxide layer on the sidewalls and bottom of the trenches; forming a conductive layer in the trenches to be used as the gate of MOSFET; forming a plurality of channel regions and source regions according to active regions of the trench MOSFET in the epi layer, and a plurality of channel regions and source regions according to termination regions of the trench MOSFET in the epi layer; forming an insulating layer on the epi layer; forming a plurality of contact openings in the insulating layer and the source and body regions; and forming metal contact plugs in the contact openings to directly contact with both source and body regions, and a metal layer on the insulating layer. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification