TRENCH GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
First Claim
1. A trench gate semiconductor device, comprising:
- a semiconductor layer of a first conductivity type;
a diffusion region of a second conductivity type formed as a planar structure on the semiconductor layer of the first conductivity type;
a diffusion region of the first conductivity type positioned selectively on an upper side of the diffusion region of the second conductivity type so as to be in contact with the diffusion region of the second conductivity type;
a gate electrode provided in a first trench via a gate insulation film, the first trench being formed in plurality in substantially one direction and each being formed to face the diffusion region of the first conductivity type and to penetrate through the diffusion region of the second conductivity type to reach the semiconductor layer of the first conductivity type; and
a first semiconductor region of the second conductivity type provided at a position, in the semiconductor layer of the first conductivity type, apart in a lateral direction from the diffusion region of the second conductivity type;
a second semiconductor region of the second conductivity type provided at a position, in the diffusion region of the second conductivity type, between adjacent trenches among the first trenches; and
a main electrode formed in contact with the semiconductor layer of the first conductivity type and the diffusion region of the first conductivity type.
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Accused Products
Abstract
Disclosed is a trench gate semiconductor device including: a semiconductor layer having a first conductivity type; a first diffusion region having a second conductivity type having a planar structure on the semiconductor layer; a second diffusion region having the first conductivity type positioned selectively on the first diffusion region; a gate electrode provided via a gate insulation film in each first trench facing the second diffusion region and penetrating through the first diffusion region to reach the semiconductor layer; a first semiconductor region of the second conductivity type provided at a position, in the semiconductor layer, apart in a lateral direction from the first diffusion region; a second semiconductor region of the second conductivity type provided at a position, in the first diffusion region, between the adjacent first trenches; and a main electrode in contact with the semiconductor layer and the second diffusion region.
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Citations
20 Claims
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1. A trench gate semiconductor device, comprising:
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a semiconductor layer of a first conductivity type; a diffusion region of a second conductivity type formed as a planar structure on the semiconductor layer of the first conductivity type; a diffusion region of the first conductivity type positioned selectively on an upper side of the diffusion region of the second conductivity type so as to be in contact with the diffusion region of the second conductivity type; a gate electrode provided in a first trench via a gate insulation film, the first trench being formed in plurality in substantially one direction and each being formed to face the diffusion region of the first conductivity type and to penetrate through the diffusion region of the second conductivity type to reach the semiconductor layer of the first conductivity type; and a first semiconductor region of the second conductivity type provided at a position, in the semiconductor layer of the first conductivity type, apart in a lateral direction from the diffusion region of the second conductivity type; a second semiconductor region of the second conductivity type provided at a position, in the diffusion region of the second conductivity type, between adjacent trenches among the first trenches; and a main electrode formed in contact with the semiconductor layer of the first conductivity type and the diffusion region of the first conductivity type. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of manufacturing a trench gate semiconductor device, the method comprising:
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forming a diffusion region of a second conductivity type as a planar structure on an upper side of a semiconductor layer of a first conductivity type; forming a diffusion region of the first conductivity type selectively on an upper side of the diffusion region of the second conductivity type; forming a trench having a sidewall, part of which is open to the diffusion region of the first conductivity type, and penetrating through the diffusion region of the second conductivity type to reach the semiconductor layer of the first conductivity type; forming, in the trench, a gate insulation film and a gate electrode surrounded by the gate insulation film; forming a first semiconductor region of the second conductivity type at a position which is in a deep portion of the semiconductor layer of the first conductivity type and is in a lateral-direction outer side of the diffusion region of the second conductivity type; and forming a second semiconductor region of the second conductivity type in a deep portion of the diffusion region of the second conductivity type so as to be apart from the gate insulation film and the gate electrode, the second semiconductor region having a higher impurity concentration than an impurity concentration of a surrounding area. - View Dependent Claims (20)
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Specification