SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
First Claim
1. A semiconductor device comprisinga semiconductor substrate provided with an N-type field effect transistor and P-type field effect transistor,with a gate electrode of said N-type field effect transistor and a gate electrode of said P-type field effect transistor having undergone full-silicidation,wherein said gate electrode of said P-type field effect transistor has such a sectional shape in the gate length direction that the gate length decreases as one goes upwards from a surface of said semiconductor substrate, andsaid gate electrode of said N-type field effect transistor has such a sectional shape in the gate length direction that the gate length increases as one goes upwards from the surface of said semiconductor substrate.
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Accused Products
Abstract
Disclosed herein is a semiconductor device including a semiconductor substrate provided with an N-type FET and P-type FET, with a gate electrode of the N-type FET and a gate electrode of the P-type FET having undergone full-silicidation, wherein the gate electrode of the P-type FET has such a sectional shape in the gate length direction that the gate length decreases as one goes upwards from a surface of the semiconductor substrate, and the gate electrode of the N-type FET has such a sectional shape in the gate length direction that the gate length increases as one goes upwards from the surface of the semiconductor substrate.
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Citations
5 Claims
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1. A semiconductor device comprising
a semiconductor substrate provided with an N-type field effect transistor and P-type field effect transistor, with a gate electrode of said N-type field effect transistor and a gate electrode of said P-type field effect transistor having undergone full-silicidation, wherein said gate electrode of said P-type field effect transistor has such a sectional shape in the gate length direction that the gate length decreases as one goes upwards from a surface of said semiconductor substrate, and said gate electrode of said N-type field effect transistor has such a sectional shape in the gate length direction that the gate length increases as one goes upwards from the surface of said semiconductor substrate.
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2. A semiconductor device comprising
a semiconductor substrate provided with an N-type field effect transistor and a P-type field effect transistor, with a gate electrode of said N-type field effect transistor and a gate electrode of said P-type field effect transistor having undergone full-silicidation, wherein said gate electrode of said P-type field effect transistor has a section having a forwardly tapered shape in relation to a surface of said semiconductor substrate, and said gate electrode of said N-type field effect transistor has a section having a reversely tapered shape in relation to the surface of said semiconductor substrate.
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5. A method of manufacturing a semiconductor device in which, at the time of providing a semiconductor substrate with an N-type field effect transistor and a P-type field effect transistor,
a gate electrode of said N-type field effect transistor and a gate electrode of said P-type field effect transistor are subjected to full-silicidation, the method comprising the steps of: -
forming said gate electrode of said P-type field effect transistor into such a sectional shape in the gate length direction that the gate length decreases as one goes upwards from a surface of said semiconductor substrate; forming said gate electrode of said N-type field effect transistor into such a sectional shape in the gate length direction that the gate length increases as one goes upwards from the surface of said semiconductor substrate; thereafter forming a mask over said gate electrode of said P-type field effect transistor and subjecting only said gate of said N-type field effect transistor to full-silicidation; and forming a mask over said gate electrode of said N-type field effect transistor and subjecting only said gate electrode of said P-type field effect transistor to full-silicidation.
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Specification