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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

  • US 20090057771A1
  • Filed: 09/04/2008
  • Published: 03/05/2009
  • Est. Priority Date: 09/05/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device comprisinga semiconductor substrate provided with an N-type field effect transistor and P-type field effect transistor,with a gate electrode of said N-type field effect transistor and a gate electrode of said P-type field effect transistor having undergone full-silicidation,wherein said gate electrode of said P-type field effect transistor has such a sectional shape in the gate length direction that the gate length decreases as one goes upwards from a surface of said semiconductor substrate, andsaid gate electrode of said N-type field effect transistor has such a sectional shape in the gate length direction that the gate length increases as one goes upwards from the surface of said semiconductor substrate.

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