Angled implantation for removal of thin film layers
First Claim
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1. A semiconductor device, comprising:
- a substrate;
a gate dielectric layer on the substrate, the gate dielectric layer having a length;
a gate electrode on the gate dielectric layer, the gate electrode having a gate length adjacent the gate dielectric layer, the gate electrode having reverse-tapered sidewalls so the gate electrode has an intermediate length further from the gate dielectric layer than the gate length, the intermediate length being greater than the gate length; and
wherein the length of the gate dielectric layer is between about 120% and about 85% of the gate length.
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Abstract
Embodiments of the invention provide a device with a reverse-tapered gate electrode and a gate dielectric layer with a length close to that of the gate length. In an embodiment, this may be done by altering portions of a blanket dielectric layer with one or more angled ion implants, then removing the altered portions of the blanket dielectric layer.
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Citations
8 Claims
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1. A semiconductor device, comprising:
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a substrate; a gate dielectric layer on the substrate, the gate dielectric layer having a length; a gate electrode on the gate dielectric layer, the gate electrode having a gate length adjacent the gate dielectric layer, the gate electrode having reverse-tapered sidewalls so the gate electrode has an intermediate length further from the gate dielectric layer than the gate length, the intermediate length being greater than the gate length; and wherein the length of the gate dielectric layer is between about 120% and about 85% of the gate length. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification