INDUCTOR OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
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1. An apparatus comprising:
- a semiconductor substrate formed with a sub-structure;
at least one metal line layer formed over the semiconductor substrate;
at least one inductor line layer formed over the metal line layer; and
a space layer formed between the inductor line layer and the semiconductor substrate.
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Abstract
An inductor of a semiconductor device and a method for manufacturing the same are disclosed. The inductor has a spiral structure, and includes a semiconductor substrate formed with a sub-structure. At least one metal line layer may be formed over the semiconductor substrate. At least one inductor line layer may be formed over the metal line layer. A space layer may be formed between the inductor line layer and the semiconductor substrate.
20 Citations
20 Claims
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1. An apparatus comprising:
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a semiconductor substrate formed with a sub-structure; at least one metal line layer formed over the semiconductor substrate; at least one inductor line layer formed over the metal line layer; and a space layer formed between the inductor line layer and the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method comprising:
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preparing a semiconductor substrate formed with an sub-structure; forming at least one metal line layer over the semiconductor substrate; forming at least one inductor line layer over the metal line layer; and forming a space layer beneath the inductor metal line layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification