SEMICONDUCTOR DIE PACKAGE INCLUDING STAND OFF STRUCTURES

• US 20090057855A1
• Filed: 08/30/2007
• Published: 03/05/2009
• Est. Priority Date: 08/30/2007
• Status: Abandoned Application

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Inventors: Quinones, Maria Clemens, Tangpuz, Connie N., Gestole, Marvin, Madrid, Ruben P., Cruz, Erwin Victor
• Application Number:
  US11/847,670
• Publication Number:
  US 20090057855A1
• Time in Patent Office: Days
• US Class Current: 257/676
• CPC Class Codes: H01L 2224/16245 the item being metallic
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/37099 Material
• CPC Class Codes: H01L 2224/371 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/37599 Material
• CPC Class Codes: H01L 2224/40245 the item being metallic
• CPC Class Codes: H01L 2224/40247 Connecting the strap to a bond pad of the item
• CPC Class Codes: H01L 2224/73153 Bump and layer connectors
• CPC Class Codes: H01L 2224/84801 Soldering or alloying
• CPC Class Codes: H01L 2224/8485 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 23/49551 characterised by bent parts
• CPC Class Codes: H01L 23/49562 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/49575 Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 24/36 Structure, shape, material or disposition of the strap connectors prior to the connecting process
• CPC Class Codes: H01L 24/37 of an individual strap connector
• CPC Class Codes: H01L 24/40 of an individual strap connector
• CPC Class Codes: H01L 24/84 using a strap connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/181 : Encapsulation

Abstract

A semiconductor die package. It includes a semiconductor die including a first surface and a second surface opposite the first surface, an optional conductive structure, and a leadframe structure. The leadframe structure comprises a central portion suitable for supporting the semiconductor die, and a plurality of stand-off structures coupled to the central portion of the leadframe structure. The stand-off structures can support the conductive structure, and the conductive structure is attached to the second surface of the semiconductor die.

Claims

1. A leadframe structure comprising:

a central portion suitable for supporting a semiconductor die comprising a first surface and a second surface opposite the first surface; and

a plurality of stand-off structures coupled to or spaced from the central portion.

2. The leadframe structure of claim 1 wherein the stand-off structures are suitable for supporting a premolded clip structure, wherein the premolded clip structure is capable of being attached to the second surface of the semiconductor die.

3. The leadframe structure of claim 1 wherein the leadframe structure comprises copper.

4. The leadframe structure of claim 1 wherein the plurality of stand-off structures comprises at least four stand-off structures, wherein there is at least one stand-off structure extending from each edge of the central portion.

5. The leadframe structure of claim 1 wherein the central portion is a drain pad.

6. The leadframe structure of claim 5 further comprising a gate lead and a source lead spaced from the central portion.

7. A method comprising:

stamping a metal sheet to form the leadframe structure of claim 1.

8. A semiconductor die package comprising:

a semiconductor die comprising a first surface and a second surface opposite the first surface; and

a leadframe structure comprising a central portion suitable for supporting the semiconductor die, and a plurality of stand-off structures coupled to the central portion of the leadframe structure, wherein the stand-off structures are capable of maintaining planarity with respect to a conductive structure comprising a planar surface.

9. The semiconductor die package of claim 8 wherein the conductive structure is a premolded clip structure, and wherein the stand-off structures are coupled to the central portion by being integral with the central portion.

10. The semiconductor die package of claim 8 wherein the semiconductor die comprises a source region and a gate region at the first surface and a drain region at the second surface, and wherein the conductive structure is a printed circuit substrate.

11. The semiconductor die package of claim 8 further comprising a molding material covering at least a portion of the leadframe structure, wherein the molding material exposes the second surface of the semiconductor die.

12. The semiconductor die package of claim 8 wherein the plurality of stand-off structures comprises at least four stand-off structures, wherein there is at least one stand-off structure extending from each edge of the central portion

13. The semiconductor die package of claim 8 further comprising a conductive adhesive between the conductive structure and the semiconductor die.

14. The semiconductor die package of claim 13 wherein the conductive adhesive comprises solder.

15. A method for forming a semiconductor die package, the method comprising:

obtaining a semiconductor die comprising a first surface and a second surface opposite the first surface;

obtaining a leadframe structure comprising a central portion surface suitable for supporting the semiconductor die, and a plurality of stand-off structures; and

attaching the leadframe structure to the semiconductor die.

16. The method of claim 15 wherein the semiconductor die comprises a source region and a gate region at the first surface and a drain region at the second surface.

17. The method of claim 15, further comprising, attaching a conductive structure to the stand-off structures and to the semiconductor die.

18. The method of claim 17 wherein attaching the conductive structure to the semiconductor die comprises using a conductive adhesive to attach the conductive structure and the semiconductor die.

19. The method of claim 15 wherein the stand-off structures are integral with the central portion.

20. The method of claim 15 further comprising molding a molding material around at least a portion of the semiconductor die and at least a portion of the leadframe structure.