Semiconductor device
First Claim
1. A semiconductor device comprising:
- a chip comprising;
a semiconductor element layer comprising a thin film transistor;
a conductive resin over the semiconductor element layer; and
a sealing layer covering the semiconductor element layer and the conductive resin, comprising a fiber body impregnated with an organic resin; and
an antenna having a depressed portion, electrically connected to the thin film transistor through the conductive resin,wherein the chip is embedded inside the depressed portion,wherein the sealing layer has a thickness of 10 to 100 μ
m, andwherein a thickness of the chip is equal to or smaller than a depth of the depressed portion.
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Accused Products
Abstract
A highly reliable semiconductor device which is not damaged by local pressing force from the outside and in which unevenness of a portion where an antenna and an element overlap with each other is reduced. The semiconductor device includes a chip and an antenna. The chip includes a semiconductor element layer including a thin film transistor; a conductive resin electrically connected to the semiconductor element layer; and a sealing layer. The sealing layer in which a fiber body is impregnated with an organic resin covers the semiconductor element layer and the conductive resin, and has a thickness of 10 to 100 μm. The antenna has a depressed portion and is electrically connected to the semiconductor element layer through the conductive resin. The chip is embedded inside the depressed portion. The thickness of the chip is equal to the depth of the depressed portion.
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Citations
22 Claims
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1. A semiconductor device comprising:
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a chip comprising; a semiconductor element layer comprising a thin film transistor; a conductive resin over the semiconductor element layer; and a sealing layer covering the semiconductor element layer and the conductive resin, comprising a fiber body impregnated with an organic resin; and an antenna having a depressed portion, electrically connected to the thin film transistor through the conductive resin, wherein the chip is embedded inside the depressed portion, wherein the sealing layer has a thickness of 10 to 100 μ
m, andwherein a thickness of the chip is equal to or smaller than a depth of the depressed portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 20)
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10. A semiconductor device comprising:
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a chip comprising; a semiconductor element layer comprising a thin film transistor; a conductive resin over the semiconductor element layer; and a sealing layer covering the semiconductor element layer and the conductive resin, comprising a fiber body impregnated with an organic resin; and an antenna having a depressed portion, electrically connected to the thin film transistor through the conductive resin; and a substrate provided to cover the chip and the antenna, wherein the chip is embedded inside the depressed portion, and is located between the antenna and substrate, wherein the sealing layer has a thickness of 10 to 100 μ
m,wherein a thickness of the chip is ⅔
to 4/3 times a thickness of the substrate. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 22)
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19. A semiconductor device comprising:
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a chip comprising; a semiconductor element layer comprising a thin film transistor; a conductive resin over the semiconductor element layer; and an antenna having a depressed portion, electrically connected to the thin film transistor through the conductive resin, wherein the chip is embedded inside the depressed portion, wherein a thickness of the chip is equal to or smaller than a depth of the depressed portion.
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21. A semiconductor device comprising:
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a chip comprising; a semiconductor element layer comprising a thin film transistor; a conductive resin over the semiconductor element layer; and an antenna having a depressed portion, electrically connected to the thin film transistor through the conductive resin; and a substrate provided to cover the chip and the antenna, wherein the chip is embedded inside the depressed portion, and is located between the antenna and substrate, wherein a thickness of the chip is ⅔
0 to 4/3 times a thickness of the substrate.
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Specification