STRUCTURE AND PROCESS FOR ELECTRICAL INTERCONNECT AND THERMAL MANAGEMENT

• US 20090057879A1
• Filed: 08/28/2007
• Published: 03/05/2009
• Est. Priority Date: 08/28/2007
• Status: Active Grant

• Current Assignee: Micross Advanced Interconnect Technology LLC
• Original Assignee: Research Triangle Institute
• Inventors: GARROU, Philip, WILLIAMS, Charles Kenneth, BOWER, Christopher A.
• Granted Patent: US 8,035,223 B2
• Time in Patent Office: Days
• US Class Current: 257/713
• CPC Class Codes: H01L 2224/02372 connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05 of an individual bonding area
• CPC Class Codes: H01L 2224/05548 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13024 the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13025 the bump connector being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/14181 On opposite sides of the body
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/16146 the bump connector connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06589 Thermal management, e.g. cooling
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

A structure and method for thermal management of integrated circuits. The structure for thermal management of integrated circuits includes first and second substrates bonded together, at least one of the first and second substrates including at least one circuit element, an entrance through-hole having a length extending through a thickness of at least one of the first substrate and the second substrate, an exit through-hole having a length extending through a thickness of at least one of the first substrate and the second substrate, a bonding element forming a seal between the first and second substrates and forming a space between the first and second substrate, and a coolant channel formed in the space between the first and second substrates such that a fluid entering the entrance through-hole transits the coolant channel and the exit through-hole to provide cooling to the circuit element. The method supplies a fluid through the entrance through-hole, flows the fluid through the coolant channel between the first substrate and second substrates, and removes the fluid from the coolant channel through the exit through-hole.

Claims

1. A structure for thermal management, comprising:

first and second substrates bonded together;

at least one of the first and second substrates including at least one circuit element;

an entrance through-hole having a length extending through a thickness of at least one of the first and second substrates;

an exit through-hole having a length extending through a thickness of at least one of the first and second substrates;

a bonding element forming a seal between the first and second substrates and forming a space between the first and second substrates; and

a first coolant channel formed in the space between the first and second substrates such that a fluid entering the entrance through-hole transits the first coolant channel and the exit through-hole to provide cooling to the circuit element.

2. The structure of claim 1, further comprising:

a metallic interconnect extending across the thickness of the first substrate or the second substrate and comprising an electrical connection to the circuit element.

3. The structure of claim 1, wherein at least one of the entrance through-hole and the exit through-hole comprises:

a metallic conduit extending across the thickness of the first substrate or the second substrate.

4. The structure of claim 3, wherein the metallic conduit comprises a metallic interconnect extending across the thickness of the first substrate or the second substrate and comprising an electrical connection to the circuit element.

5. The structure of claim 3, wherein the metal conduit comprises a flange.

6. The structure of claim 5, further comprising:

a metallic interconnect extending through the thickness of the first substrate or the second substrate and connected to the flange.

7. The structure of claim 6, further comprising:

an electrical insulator isolating the metallic interconnect from an interior of the entrance through-hole or the exit through-hole.

8. The structure of claim 7, wherein the electrical insulator comprises:

an air region, an inert gas region, a SiO₂ layer, a Si₃N₄ layer, a SiO_xN_y layer, a non-porous insulating layer, a polymeric layer, or any combination thereof.

9. The structure of claim 3, further comprising:

an electrical isolation region surrounding the metallic conduit.

10. The structure of claim 9, wherein the electrical isolation region comprises:

an air region, an inert gas region, a SiO₂ layer, a Si₃N₄ layer, a SiO_xN_y layer, a non-porous insulating layer, a polymeric layer, or any combination thereof.

11. The structure of claim 1, wherein the bonding element comprises:

a eutectic alloy joining the first and second substrate.

12. The method of claim 11, wherein the eutectic alloy comprises:

an alloy including at least one of Cu, Sn, Au, and Pb.

13. The structure of claim 1, wherein the first coolant channel comprises an undulating path for fluid flow between the first and second substrates.

14. The structure of claim 13, wherein the undulating path comprises at least one of a serpentine path and a spiral path.

15. The structure of claim 1, wherein at least one of the entrance through-hole and the exit through-hole comprises:

two passages through the first substrate or through the second substrate, said passages connecting to the first coolant channel.

16. The structure of claim 15, wherein at least one of the two passages has an interior insulator disposed on interior surfaces of the passages.

17. The structure of claim 16, wherein the interior insulator comprises:

an air region, an inert gas region, a SiO₂ layer, a Si₃N₄ layer, a SiO_xN_y layer, a non-porous insulating layer, a polymeric layer, or any combination thereof.

18. The structure of claim 1, wherein the at least one circuit element comprises heat-generating circuits.

19. The structure of claim 1, further comprising a third substrate, and

wherein at least one the first, second, and third substrates includes heat-generating circuits.

20. The structure of claim 19, further comprising:

a second coolant channel formed in a space between the second and third substrates such that the second coolant channel provides cooling to the second and third substrates.

21. A method for making a structure for thermal management of circuit devices, comprising:

providing a first substrate and a second substrate, wherein at least one of the first and second substrates includes a circuit element;

forming in at least one of the first substrate and the second substrate an entrance through-hole extending through a thickness of the first substrate or the second substrate;

forming in at least one of the first substrate and the second substrate an exit through-hole extending through a thickness of the first substrate or the second substrate;

forming respective bonding elements on at least one of the first and second substrates; and

bonding the first and second substrates at the respective bonding elements to form a seal between the first and second substrates and to form a first coolant channel in between the first and second substrates.

22. The method of claim 21, wherein forming respective bonding elements comprises:

forming metallic bonding elements on the first and second substrates.

23. The method of claim 21, wherein at least one of forming the entrance through-hole and forming the exit through-hole comprises:

forming a metallic conduit for connection to the circuit element.

24. The method of claim 23, wherein at least one of forming the entrance through-hole and forming the exit through-hole comprises:

forming an electrical isolation region surrounding the metallic conduit.

25. The method of claim 23, wherein forming a metallic conduit comprises:

forming said metal conduit with a flange.

26. The method of claim 25, further comprising:

forming a metallic interconnect extending through said thickness of the first or the second substrate to form an electrical connection to the circuit element.

27. The method of claim 26, further comprising:

upon said bonding, connecting the flange to the metallic interconnect.

28. The method of claim 26, wherein forming a metallic interconnect comprises:

forming the metallic interconnect as a part of the entrance through-hole or the exit through-hole.

29. The method of claim 26, wherein forming a metallic interconnect comprises:

isolating the metallic interconnect from an interior of the through-hole using an electrical insulator.

30. The method of claim 21, wherein forming respective metallic bonding elements comprises:

forming an undulating path for the first coolant channel between the first and second substrates.

31. The method of claim 30, wherein forming an undulating path comprises:

forming at least one of a serpentine path and a spiral path.

32. The method of claim 21, wherein at least one of forming the entrance through-hole and forming the exit through-hole comprises:

forming two passages through the first substrate or the second substrate, said passages connecting to the first coolant channel.

33. The method of claim 32, further comprising:

disposing an interior insulator on interior surfaces of the passages.

34. The method of claim 21, further comprising:

providing a third substrate, wherein at least one the first, second, and third substrates includes heat-generating circuits; and

forming a second coolant channel in a space between the second and third substrate for cooling the second and third substrates.

35. A system for thermal management of first and second substrates in which at least one of the first and second substrates includes a circuit element, comprising:

a fluid supply configured to supply a fluid through an entrance through-hole in at least one of the first and second substrates and to remove said fluid through an exit through-hole in at least one of the first and second substrates, said fluid to flow through a first coolant channel between the first substrate and second substrates, said first coolant channel sealed by at least one bonding element joining the first substrate to the second substrate; and

a heat dissipater configured to dissipate heat accumulated in the fluid.

36. The system of claim 35, wherein the heat dissipater comprises:

a heat exchanger configured to cool the fluid before return to the entrance through-hole.

37. The system of claim 35, wherein the heat dissipater comprises:

a fluid dispenser configured to dispense the fluid into ambient after fluid flow through the exit through-hole.

38. The system of claim 35, wherein the fluid supply comprises:

at least one of a gas supply and a liquid supply.

39. The system of claim 38, wherein the gas supply comprises:

at least one of a hydrocarbon supply, a fluorinated hydrocarbon supply, a chlorinated hydrocarbon supply, a helium supply, a hydrogen supply, a nitrogen supply, and an air supply.

40. The system of claim 38, wherein the liquid supply comprises:

at least one of water, a liquid hydrocarbon supply, a liquid fluorinated hydrocarbon supply, a liquid chlorinated hydrocarbon supply, and a liquid nitrogen supply.

41. A method for thermal management of first and second substrates in which at least one of the first and second substrates includes a circuit element, comprising:

supplying a fluid through an entrance through-hole in at least one of the first and second substrates;

flowing said fluid through a first coolant channel between the first substrate and second substrates, said first coolant channel sealed by at least one bonding element joining the first substrate to the second substrate; and

removing said fluid from the first coolant channel through an exit through-hole in at least one of the first and second substrates.

42. The method of claim 41, further comprising:

dissipating heat accumulated in the fluid before return to the entrance through-hole.

43. The method of claim 41, wherein dissipating heat comprises:

circulating the fluid through a heat exchanger before return to the entrance through-hole.

44. The method of claim 41, further comprising:

dispensing the fluid into ambient after fluid flow through the exit through-hole.

45. The method of claim 41, wherein supplying a fluid comprises:

supplying at least one of a gas or liquid to the first coolant channel.

46. The method of claim 45, wherein supplying at least one of a gas or liquid comprises:

supplying one of a hydrocarbon gas, a fluorinated hydrocarbon gas, a chlorinated hydrocarbon gas, helium, hydrogen, nitrogen, or air.

47. The method of claim 45, wherein supplying at least one of a gas or liquid comprises:

supplying one of water, a hydrocarbon liquid, a fluorinated hydrocarbon liquid, a chlorinated hydrocarbon liquid, or liquid nitrogen.

48. The method of claim 41, further comprising:

supplying said fluid to a second coolant channel formed by a space between the second substrate and a third substrate.