LIGHT-EMITTING DEVICE

• US 20090058256A1
• Filed: 06/20/2008
• Published: 03/05/2009
• Est. Priority Date: 08/31/2007
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: HATTORI, Yasushi, MITSUISHI, Iwao, NUNOUE, Shinya
• Granted Patent: US 7,884,538 B2
• Time in Patent Office: Days
• US Class Current: 313/487
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials

Abstract

A light-emitting device is provided, which includes a package having a first portion and a second portion surrounding it, a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak in a near-ultraviolet region, a transparent resin layer covering the semiconductor light-emitting element and contacted with the package, and a laminated body formed on the transparent resin layer with end faces of the laminated body being contacted with the second portion. The transparent resin layer has an arch-like outer profile perpendicular cross section. The laminated body has an arch-like outer profile in perpendicular cross section and comprises a red fluorescent layer, a yellow fluorescent layer, a green fluorescent layer and a blue fluorescent layer laminated in the mentioned order. The yellow fluorescent layer has a top portion which is made larger in thickness than that of the end face portions thereof.

Claims

1. A light-emitting device comprising:

a package having, on a surface thereof, a first portion and a second portion surrounding the first portion;

a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak at a near-ultraviolet region;

a transparent resin layer covering the semiconductor light-emitting element and contacted with the first portion and the second portion, the transparent resin layer having an arch-like outer profile, as seen in a cross section when cut perpendicularly to the surface; and

a laminated body formed on the transparent resin layer with end faces of the laminated body being contacted with the second portion, the laminated body having an arch-like outer profile, as seen in a cross section when cut perpendicularly to the surface and comprising a red fluorescent layer, a yellow fluorescent layer, a green fluorescent layer and a blue fluorescent layer which are laminated in the mentioned order, the yellow fluorescent layer having a top portion larger in thickness than that of the end face portions thereof.

2. The device according to claim 1, wherein in the yellow fluorescent layer, a thickness of the top portion is at least 1.5 times larger than that of the end faces.

3. The device according to claim 1, wherein in yellow fluorescent layer, a thickness of the top portion is not more than four times larger than that of the end faces.

4. The device according to claim 1, wherein in the yellow fluorescent layer, a thickness of the top portion thereof is twice larger than that of the end faces.

5. The device according to claim 1, wherein a wavelength of the light emitted from the semiconductor light-emitting element is confined within the range of 375-420 nm.

6. A light-emitting device comprising:

a package having, on a surface thereof, a first portion and a second portion surrounding the first portion;

a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak at a near-ultraviolet region;

a first transparent resin layer covering the semiconductor light-emitting element and contacted with the first portion and the second portion, the first transparent resin layer having an arch-like outer profile, as seen in a cross section when cut perpendicularly to the surface; and

a laminated body formed on the first transparent resin layer with end faces of the laminated body being contacted with the second portion, the laminated body having an arch-like outer profile, as seen in a cross section when cut perpendicularly to the surface and comprising a red fluorescent layer, a yellow fluorescent layer, a second transparent resin layer, a green fluorescent layer and a blue fluorescent layer which are laminated in the mentioned order, the second transparent resin layer having a top portion larger in thickness than that of the end face portions thereof.

7. The device according to claim 6, wherein in the second transparent resin layer, a thickness of the top portion is at least 1.5 times larger than that of the end faces.

8. The device according to claim 6, wherein in the second transparent resin layer, a thickness of the top portion is not more than four times larger than that of the end faces.

9. The device according to claim 6, wherein in the second transparent resin layer, a thickness of the top portion is twice larger than that of the end faces.

10. The device according to claim 6, wherein a wavelength of the light emitted from the semiconductor light-emitting element is confined within the range of 375-420 nm.

11. A light-emitting device comprising:

a package having, on a surface thereof, a first portion and a second portion surrounding the first portion;

a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak at a blue color region;

a transparent resin layer covering the semiconductor light-emitting element and contacted with the first portion and the second portion, the transparent resin layer having an arch-like outer profile, as seen in a cross section when cut perpendicularly to the surface; and

a laminated body formed on the transparent resin layer with end faces of the laminated body being contacted with the second portion, the laminated body having an arch-like outer profile, as seen in a cross section when cut perpendicularly to the surface and comprising a red fluorescent layer, a yellow fluorescent layer and a green fluorescent layer which are laminated in the mentioned order, the yellow fluorescent layer having a top portion made larger in thickness than that of the end face portions thereof.

12. The device according to claim 11, wherein in the yellow fluorescent layer, a thickness of the top portion is at least 1.5 times larger than that of the end faces thereof.

13. The device according to claim 11, wherein in the yellow fluorescent layer, a thickness of the top portion is not more than four times larger than that of the end faces.

14. The device according to claim 11, wherein in the yellow fluorescent layer, a thickness of the top portion is twice larger than that of the end faces.

15. The device according to claim 11, wherein a wavelength of the light emitted from the semiconductor light-emitting element is confined within the range of 430-480 nm.

16. A light-emitting device comprising:

a package having, on a surface thereof, a first portion and a second portion surrounding the first portion;

a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak at a blue color region;

a first transparent resin layer covering the semiconductor light-emitting element and contacted with the first portion and the second portion, the first transparent resin layer having an arch-like outer profile, as seen in a cross section when cut perpendicularly to the surface; and

a laminated body formed on the first transparent resin layer with end faces of the laminated body being contacted with the second portion, the laminated body having an arch-like outer profile, as seen in a cross section when cut perpendicularly to the surface and comprising a red fluorescent layer, a yellow fluorescent layer, a second transparent resin layer and a green fluorescent layer which are laminated in the mentioned order, the second transparent resin layer having a top portion made larger in thickness than that of the end face portions thereof.

17. The device according to claim 16, wherein in the second transparent resin layer, a thickness of the top portion is at least 1.5 times larger than that of the end faces.

18. The device according to claim 16, wherein in the second transparent resin layer, a thickness of the top portion is not more than four times larger than that of the end faces.

19. The device according to claim 16, wherein in the second transparent resin layer, a thickness of the top portion is twice larger than that of the end faces.

20. The device according to claim 16, wherein a wavelength of the light emitted from the semiconductor light-emitting element is confined within the range of 430-480 nm.