TRAJECTORY BASED CONTROL OF PLASMA PROCESSING

• US 20090061544A1
• Filed: 11/30/2007
• Published: 03/05/2009
• Est. Priority Date: 08/30/2007
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Lill, Thorsen B., HOLLAND, JOHN P., Todorow, Valentin N., Shen, Meihua, Yamartino, John M., Paterson, Alexander
• Application Number:
  US11/948,030
• Publication Number:
  US 20090061544A1
• Time in Patent Office: Days
• US Class Current: 438/14
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/3299 Feedback systems
• CPC Class Codes: H01L 21/32137 of silicon-containing layers
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32

Abstract

A method of controlling a plasma processing according to trajectories connecting start and stop values of parameters controlling the plasma processing, for example, gas flow and power supplied to generate the plasma. The trajectories maybe based on equations including at least time as a variable. At set times within the processing, the values of the parameters are updated according to the predetermined trajectories. Sensors associated with the chamber may also adjust the trajectories, provide variables to the equations, and/or define the trajectories.

Claims

1. A plasma processing system, comprising:

a plasma processing chamber for processing a substrate and including a plurality of parameter functions for controlling the processing, at least one power supply operatively associated with a plasma within the chamber, and at least one gas supply supplying a gas for the plasma; and

a control system operatively coupled to the chamber, the control systems controls the plurality of parameter functions according to respective trajectories extending over a time period between respective start values and stop values and being controlled at a plurality of temporal points within the time period separated by a fixed time increment.

2. The system of claim 1, wherein the trajectories are defined by respective equations having at least time as a variable.

3. The system of claim 2, further comprising a clock providing a signal for the time in the equation.

4. The system of claim 2, further comprising a sensor operatively associated with the chamber to monitor the processing and providing a sensor signal for another variable for at least one of the equations.

5. The system of claim 1, wherein the plasma processing chamber is a plasma etching chamber and the processing gas includes an etching gas.

13. The method of claim 5, further comprising the steps of:

determining if the time period has been reached;

if the time period has been reach,

setting second start and stop values extending over a second time,

defining second trajectories of the control functions connecting the second start and stop values over the second time period, and

at each of a plurality of time points within the second time period, determining values of the control functions according to the second trajectories.

6. A method of controlling a plasma processing chamber, the method comprising:

setting start and stop values for a plurality of control functions extending over a time period for plasma processing a substrate within the chamber;

defining trajectories of the control functions connecting the start and stop values over the time period; and

at each of a plurality of differing time points within the time period, determining values of the control functions according to the trajectories.

7. The method of claim 6, wherein the plurality of time points are separated by a fixed time increment.

8. The method of claim 6, wherein the trajectories are defined by respective equations having time as a variable.

9. The method of claim 8, further comprising sensing at each of the time points a condition associated with the chamber and providing a sensed signal as a second variable in at least one of the equations.

10. The method of claim 6, further comprising sensing at each of the time points a condition associated with the chamber and accordingly adjusting at least one of the trajectories.

11. The method of claim 6, further comprising:

controlling an amount of a gas supplied into the chamber according to a first one of the control functions; and

supplying an amount of power to generate a plasma of the gas according to a second one of the control functions.

12. The method of claim 6, wherein the time increment is fixed.

14. The method of claim 6, wherein the plasma processing chamber is a plasma etch chamber and further comprising supplying an etching gas into the plasma etch chamber to etch the substrate.

15. The method of claim 14, wherein the substrate includes a polysilicon layer and the etching gas selectively etches it to an underlying oxide layer.