Method for Supporting Partial Cache Line Read and Write Operations to a Memory Module to Reduce Read and Write Data Traffic on a Memory Channel
First Claim
1. A method for controlling an amount of data transmitted to or from a memory module, comprising:
- responsive to an access request, determining, in a memory hub controller integrated in the memory module, the amount of data to be transmitted to or from a set of memory devices of the memory module,generating, in the memory hub controller, a burst length field corresponding to the amount of data; and
controlling, by the memory hub controller, the amount of data that is transmitted to or from the memory devices using the burst length field, wherein the amount of data is equal to or less than a standard data burst amount of data for the set of memory devices.
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Abstract
A method is provided that supports partial cache line read and write operations to a memory module to reduce read and write data traffic on a memory channel. In a memory hub controller integrated in the memory module determines an amount of data to be transmitted to or from a set of memory devices of the memory module, in responsive to an access request. The memory hub controller generates a burst length field corresponding to the amount of data. The memory controller controls the amount of data that is transmitted to or from the memory devices using the burst length field. The amount of data is equal to or less than a standard data burst amount of data for the set of memory devices.
124 Citations
19 Claims
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1. A method for controlling an amount of data transmitted to or from a memory module, comprising:
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responsive to an access request, determining, in a memory hub controller integrated in the memory module, the amount of data to be transmitted to or from a set of memory devices of the memory module, generating, in the memory hub controller, a burst length field corresponding to the amount of data; and controlling, by the memory hub controller, the amount of data that is transmitted to or from the memory devices using the burst length field, wherein the amount of data is equal to or less than a standard data burst amount of data for the set of memory devices. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification