Semiconductor Device, Manufacturing Method Thereof, and Manufacturing Method of Antenna

• US 20090065588A1
• Filed: 05/29/2006
• Published: 03/12/2009
• Est. Priority Date: 05/31/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Goto, Yuugo, Aoki, Tomoyuki
• Granted Patent: US 7,767,516 B2
• Time in Patent Office: Days
• US Class Current: 235/492
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: H01L 23/49855 for flat-cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/5328 containing conductive organic materials or pastes, e.g. conductive adhesives, inks
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01Q 1/38 formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142
• CPC Class Codes: H01Q 23/00 Antennas with active circuits or circuit elements integrated within them or attached to them
• CPC Class Codes: H01Q 7/00 Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
• CPC Class Codes: H01Q 9/27 Spiral antennas
• CPC Class Codes: H05K 3/1216 by screen printing or stencil printing

Abstract

An element group having a transistor is formed over a substrate and a conductive film to be a dummy pattern is formed over the element group by pushing out a paste including conductive particles from a first opening portion, and then a conductive film functioning as an antenna is formed continuously thereafter so as to electrically connect with the transistor, by pushing out a paste including conductive particles from a second opening portion. Therefore, an element group having a transistor, provided over a substrate; a first conductive film functioning as an antenna provided over the element group and is electrically connected to the transistor; a second conductive film to be a dummy pattern provided to be adjacent to the first conductive film and is not electrically connected to the transistor; are included.

Claims

1. A manufacturing method of a semiconductor device comprising:

forming an element group having a transistor over a substrate; and

pushing out a paste including conductive particles from a first opening of a screen printing plate to form a first conductive film over the element group,

subsequently pushing out the paste including the conductive particles from a second opening of the screen printing plate to form a second conductive film functioning as an antenna,

wherein the first conductive film is formed to be electrically insulated from the transistor; and

wherein the second conductive film is formed to be electrically connected to the transistor.

5. The manufacturing method of a semiconductor device according to any one of claims 1 to 3, wherein the second conductive film is formed in a coil form.

6. The manufacturing method of a semiconductor device according to any one of claims 1 to 3, wherein as the screen printing plate, a screen printing plate in which a width of the first opening is wider than a width of the second opening portion is used.

7. The manufacturing method of a semiconductor device according to any one of claims 1 to 3, wherein a width of the first conductive film to be wider than a width of the second conductive film functioning as an antenna is formed.

8. The manufacturing method of a semiconductor device according to any one of claims 1 to 3, further comprising baking the paste pushed out from the first opening and the paste pushed out from the second opening to form the first conductive film and the second conductive film functioning as an antenna.

20. The manufacturing method of a semiconductor device according to any one of claims 1 to 3, further comprising:

cutting off the substrate to remain the first and second conductive films on the same surface.

2. A manufacturing method of a semiconductor device comprising:

forming an element group having a transistor over a first substrate; and

pushing out a paste including conductive particles from a first opening of a screen printing plate to form a first conductive film over a second substrate,

subsequently pushing out the paste including the conductive particles from a second opening of the screen printing plate to form a second conductive film functioning as an antenna,

wherein the first conductive film is formed to be electrically insulated from the transistor; and

wherein the second conductive film formed over the second substrate is electrically connected to the transistor.

3. A manufacturing method of a semiconductor device comprising:

forming an element group having a transistor over a first substrate; and

pushing out a paste including conductive particles from a first opening of a screen printing plate to form over a second substrate a first conductive film,

subsequently pushing out the paste including the conductive particles from a second opening portion of the screen printing plate to form a second conductive film functioning as an antenna,

wherein the first conductive film is formed to be electrically insulated from the transistor; and

wherein the first substrate and the second substrate are stuck together so that the transistor and the second conductive film functioning as an antenna are electrically connected.

4. The manufacturing method of a semiconductor device according to claim 3, wherein conductive particles are to connect the transistor and the second conductive film functioning as an antenna.

9. A semiconductor device comprising:

an element group having a transistor, provided over a substrate;

a first conductive film formed over the element group and electrically insulated from the transistor; and

a second conductive film functioning as an antenna provided adjacent to the first conductive film and provided to be electrically connected to the transistor.

10. A semiconductor device comprising:

an element group having a transistor, provided over a substrate;

a first conductive film provided over the element group and electrically insulated from the transistor; and

a second conductive film functioning as an antenna provided adjacent to the first conductive film and provided to be electrically connected to the transistor,

wherein the second conductive film is in a coil form;

wherein the first conductive film is bent and has a first end portion and a second end portion; and

wherein the first end portion and the second end portion are not connected.

11. The semiconductor device according to claim 9 or claim 10, wherein the second conductive film is provided on an outer side of a region in which the first conductive film is positioned, and is non-circular.

12. The semiconductor device according to claim 9 or 10, wherein the first conductive film has a width wider than a width of the second conductive film.

13. The semiconductor device according to claim 9 or 10, wherein the transistor and the first conductive film are connected via conductive particles.

21. The semiconductor device according to claim 9 or claim 10, wherein the second conductive film is formed over the element group.

22. The semiconductor device according to claim 9 or claim 10, wherein a square of a rear surface of the semiconductor device is 0.09 cm² to 4 cm².

23. The semiconductor device according to claim 9 or claim 10, wherein a width of the second conductive film is 50 μ

m or more and 400 μ

m or less.

24. The semiconductor device according to claim 9 or claim 10, wherein a third conductive film adjacent to the second conductive film and over substrate;

and

wherein an interval between the second conductive film and the third conductive film is 100 μ

m or less.

14. A semiconductor device comprising:

an element group having a transistor, provided over a substrate; and

a coil-formed conductive film functioning as an antenna provided over the element group and is electrically connected to the transistor,

wherein a width of a portion of the conductive film positioned in an outermost circumference is wider than a width of a portion positioned on an inner side.

15. A manufacturing method of an antenna comprising

pushing out a paste including conductive particles from a first opening of a screen printing plate to form over a substrate a first conductive film,

subsequently pushing out the paste including the conductive particles from a second opening of the screen printing plate to form a second conductive film functioning as an antenna.

16. The manufacturing method of an antenna according to claim 15, wherein forming the second conductive film is formed in a coil form.

17. The manufacturing method of an antenna according to claim 15 or claim 16, wherein as the screen printing plate, a screen printing plate in which a width of the first opening is wider than a width of the second opening portion is used.

18. The manufacturing method of an antenna according to claim 15 or claim 16, further comprising forming a width of the first conductive film to be wider than a width of the second conductive film functioning as an antenna.

19. The manufacturing method of an antenna according to claim 15 or claim 16, further comprising baking the paste pushed out from the first opening and the paste pushed out from the second opening to form the first conductive film and the second conductive film functioning as an antenna.