FIELD EFFECT TRANSISTOR USING OXIDE FILM FOR CHANNEL AND METHOD OF MANUFACTURING THE SAME
First Claim
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1. A field effect transistor, comprising an oxide film as a semiconductor layer,wherein the oxide film includes one of a source part and a drain part to which one of hydrogen and deuterium is added.
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Abstract
The present invention provides a field effect transistor including an oxide film as a semiconductor layer, wherein the oxide film includes one of a source part and a drain part to which one of hydrogen and deuterium is added.
532 Citations
10 Claims
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1. A field effect transistor, comprising an oxide film as a semiconductor layer,
wherein the oxide film includes one of a source part and a drain part to which one of hydrogen and deuterium is added.
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2. A field effect transistor, comprising an oxide film as a semiconductor layer,
wherein the oxide film includes a channel part, a source part, and a drain part, and wherein a concentration of one of hydrogen and deuterium in the source part and the drain part is larger than a concentration of one of hydrogen and deuterium in the channel part.
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8. A method of manufacturing a field effect transistor including an oxide film as a semiconductor layer, comprising the steps of:
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forming the oxide film on a substrate; and adding one of hydrogen and deuterium to a portion of the oxide film to form a source part and a drain part.
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9. A method of manufacturing a field effect transistor including an oxide film as a semiconductor layer, comprising the steps of:
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forming the oxide film on a substrate; forming a gate insulating film on the oxide film; forming a gate electrode on the gate insulating film; and adding one of hydrogen and deuterium to the oxide film with using a pattern of the gate electrode as a mask to form a source part and a drain part in the oxide film in self-alignment with the pattern of the gate electrode.
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10. A field effect transistor comprising:
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an oxide semiconductor layer including a channel region; a gate electrode; a gate insulator; a drain electrode; and a source electrode, wherein the oxide semiconductor layer further includes a pair of doped regions adjacent to the source or drain electrode, each of the doped region having at least one of hydrogen and deuterium, and wherein a concentration of one of hydrogen and deuterium in the doped region is larger than a concentration of one of hydrogen and deuterium in the channel region.
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Specification