MOS device with schottky barrier controlling layer
First Claim
1. A semiconductor device formed on a semiconductor substrate, comprising:
- a drain;
an epitaxial layer overlaying the drain; and
an active region comprising;
a body disposed in the epitaxial layer, having a body top surface;
a source embedded in the body, extending from the body top surface into the body;
a gate trench extending into the epitaxial layer;
a gate disposed in the gate trench;
an active region contact trench extending through the source and the body into the drain;
an active region contact electrode disposed within the active region contact trench, wherein the active region contact electrode and the drain form a Schottky diode; and
a Schottky barrier controlling layer disposed in the epitaxial layer adjacent to the active region contact trench.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device is formed on a semiconductor substrate. The semiconductor device comprises a drain, an epitaxial layer overlaying the drain, and an active region. The active region comprises a body disposed in the epitaxial layer, having a body top surface, a source embedded in the body, extending from the body top surface into the body, a gate trench extending into the epitaxial layer, a gate disposed in the gate trench, an active region contact trench extending through the source and the body into the drain, an active region contact electrode disposed within the active region contact trench, wherein the active region contact electrode and the drain form a Schottky diode, and a Schottky barrier controlling layer disposed in the epitaxial layer adjacent to the active region contact trench.
-
Citations
26 Claims
-
1. A semiconductor device formed on a semiconductor substrate, comprising:
-
a drain; an epitaxial layer overlaying the drain; and an active region comprising; a body disposed in the epitaxial layer, having a body top surface; a source embedded in the body, extending from the body top surface into the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; an active region contact trench extending through the source and the body into the drain; an active region contact electrode disposed within the active region contact trench, wherein the active region contact electrode and the drain form a Schottky diode; and a Schottky barrier controlling layer disposed in the epitaxial layer adjacent to the active region contact trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
-
-
16. A method of fabricating a semiconductor device, comprising:
-
forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the gate trench; forming a body; forming a source; forming an active region contact trench that extends through the source and the body into the drain; depositing a Schottky barrier controlling layer in and disposing a contact electrode within the active region contact trench. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
-
Specification