Method and System for Filling Voids in Electromechanical Systems

• US 20090067025A1
• Filed: 09/10/2007
• Published: 03/12/2009
• Est. Priority Date: 09/10/2007
• Status: Abandoned Application

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Winterton, Gregory Dean, Atnip, Earl Vedere, Franklin, Mark Andrew
• Application Number:
  US11/852,629
• Publication Number:
  US 20090067025A1
• Time in Patent Office: Days
• US Class Current: 359/224.100
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means

Abstract

In accordance with one embodiment of the present disclosure, a method for filling a void of an electromechanical system includes forming a void within a support layer. A conductive layer is formed outwardly from the support layer such that a portion of the conductive layer partially fills the void. A remainder of the void is filled with an inorganic material. A mirror is formed outwardly from the inorganic material and the conductive layer.

Claims

1. A method for filling a void of an electromechanical system, the method comprising:

forming a support layer having the void;

forming a first layer outwardly from the support layer such that a portion of the first layer partially fills the void;

filling a remainder of the void with an inorganic material; and

forming a mirror outwardly from the inorganic material and the conductive layer.

2. The method of claim 1, further comprising curing the inorganic material.

3. The method of claim 2, wherein the cure temperature is less than approximately 200°

C.

4. The method of claim 2, further comprising selecting the inorganic material based on its volume change as a result of the curing step.

5. The method of claim 1, further comprising selecting the inorganic material based on a minimal susceptibility to outgas.

6. The method of claim 1, further comprising overfilling the remainder of the void with the inorganic material.

7. The method of claim 1, wherein the inorganic material inherently forms a planar outer surface after completion of the filling step.

8. The method of claim 1, wherein filling a remainder of the void with an inorganic material comprises spinning on a liquid.

9. The method of claim 1, wherein the inorganic material is glass.

10. The method of claim 1, wherein the inorganic material is capable of filling voids having a maximum width of 0.5 μ

m.

11. The method of claim 1, wherein the first layer is conductive.

12. A electromechanical system device comprising:

a first layer having a via filled by an inorganic material; and

a moveable mirror disposed outwardly from the inorganic material and the first layer.

13. The electromechanical system device of claim 12, wherein the inorganic material is cured.

14. The electromechanical system device of claim 13, wherein the cure temperature is less than approximately 200°

C.

15. The electromechanical system device of claim 13, wherein the inorganic material is selected based on its volume change as a result of the curing step.

16. The electromechanical system device of claim 13, wherein the inorganic material is selected based on a minimal susceptibility to outgas.

17. The electromechanical system device of claim 12, wherein the inorganic material is a spin-on liquid glass.

18. The electromechanical system device of claim 12, wherein the via is less than approximately 0.5 μ

m wide.

19. The electromechanical system device of claim 12, wherein the first layer is conductive.

20. A method of forming a deformable micromirror device comprising:

forming a support layer outwardly from a hinge, the support layer having a void;

forming a first filling layer outwardly from the support layer such that a portion of the first filling layer partially fills the void and couples to the hinge;

filling a remainder of the void with an inorganic material; and

forming a mirror outwardly from the inorganic material and the first filling layer layer; and

removing the support layer.

21. The method of claim 20, wherein the inorganic material is a spin-on glass.

22. The method of claim 20, wherein the void is less than approximately 0.5 μ

m wide.

23. The method of claim 20, wherein the first filling layer is conductive.