SEMICONDUCTOR OPTICAL SWITCH

• US 20090067782A1
• Filed: 08/01/2008
• Published: 03/12/2009
• Est. Priority Date: 08/01/2007
• Status: Active Grant

• Current Assignee: Yokogawa Electric Corporation
• Original Assignee: Yokogawa Electric Corporation
• Inventors: Asano, Yoshiyuki, SUEHIRO, Masayuki, Wada, Morio, Iio, Shinji, Nakajima, Shinichi
• Granted Patent: US 7,689,069 B2
• Time in Patent Office: Days
• US Class Current: 385/18
• CPC Class Codes: G02F 1/3138 the optical waveguides being made of semiconducting materials

Abstract

A semiconductor optical switch may include an optical waveguide, a first electrode, and a first reflector. The optical waveguide may include a branching point, a first incoming path and first and second outgoing paths. The first electrode is provided at the branching point to give carrier injection into the branching point to allow that the branching point reflects an optical signal that is propagating through the first incoming path so that the reflected optical signal propagates through the second outgoing path. The first electrode may give no carrier injection into the branching point to allow that the branching point allows the optical signal to transmit through the branching point and propagate through the first outgoing path. The first reflector is provided on the first outgoing path. The first reflector reflects a leakage of light that has propagated from the branching point.

Claims

1. A semiconductor optical switch comprising:

an optical waveguide that comprises a branching point, a first incoming path and first and second outgoing paths;

a first electrode provided at the branching point, the first electrode giving carrier injection into the branching point to allow that the branching point reflects an optical signal that is propagating through the first incoming path so that the reflected optical signal propagates through the second outgoing path, the first electrode giving no carrier injection into the branching point to allow that the branching point allows the optical signal to transmit through the branching point and propagate through the first outgoing path; and

a first reflector provided on the first outgoing path, the first reflector reflecting a leakage of light that has propagated from the branching point, the leakage of light being generated upon carrier injection into the branching point.

2. The semiconductor optical switch according to claim 1, further comprising:

a second reflector provided on the second outgoing path, the second reflector reflecting a cross-talk light from the branching point, the cross-talk light being generated upon no carrier injection into the branching point.

3. The semiconductor optical switch according to claim 1, wherein the first reflector adjusts its first transmission wavelength so as to control whether the first transmission wavelength is identical to or different from the wavelength of the leakage of light.

4. The semiconductor optical switch according to claim 2, wherein the second reflector adjusts its second transmission wavelength so as to control whether the second transmission wavelength is identical to or different from the wavelength of the cross-talk light.

5. The semiconductor optical switch according to claim 3, wherein the first reflector comprises a first grating on the first outgoing path and a second electrode on the first outgoing path, the second electrode giving carrier injection into the first grating to allow that the first grating reflects the leakage of light, and the second electrode giving no carrier injection into the first grating to allow that the first grating propagates the optical signal through the first grating.

6. The semiconductor optical switch according to claim 5, wherein the first grating comprises an alternating stack of different materials having different reflectivities, the first grating has a first effective grating pitch that is controllable by controlling carrier injection into the first grating.

7. The semiconductor optical switch according to claim 4, wherein the second reflector comprises a second grating on the second outgoing path and a third electrode on the second outgoing path, the third electrode giving carrier injection into the second grating to allow that the second grating reflects the cross-talk light, and the third electrode giving no carrier injection into the second grating to allow that the second grating propagates the optical signal through the second grating.

8. The semiconductor optical switch according to claim 7, wherein the second grating comprises an alternating stack of different materials having different reflectivities, the second grating has a second effective grating pitch that is controllable by controlling carrier injection into the second grating.