POSITIVE PHOTORESIST COMPOSITION, THICK FILM PHOTORESIST LAMINATE, METHOD FOR PRODUCING THICK FILM RESIST PATTERN, AND METHOD FOR PRODUCING CONNECTING TERMINAL

• US 20090068342A1
• Filed: 03/30/2006
• Published: 03/12/2009
• Est. Priority Date: 05/24/2005
• Status: Abandoned Application

• Current Assignee: Tokyo OHKA Kogyo Company Limited
• Original Assignee: Tokyo OHKA Kogyo Company Limited
• Inventors: Saito, Koji, Misumi, Koichi, Senzaki, Takahiro
• Application Number:
  US11/915,134
• Publication Number:
  US 20090068342A1
• Time in Patent Office: Days
• US Class Current: 427/58
• CPC Class Codes: C08F 220/06 Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
• CPC Class Codes: C08F 220/1804 C4-(meth)acrylate, e.g. butyl (meth)acrylate, isobutyl (meth)acrylate or tert-butyl (meth)acrylate
• CPC Class Codes: C08F 220/1807 C7-(meth)acrylate, e.g. heptyl (meth)acrylate or benzyl (meth)acrylate
• CPC Class Codes: C08F 220/282 and containing two or more oxygen atoms
• CPC Class Codes: G03F 7/0397 the macromolecular compound having an alicyclic moiety in a side chain

Abstract

The present invention provides a positive photoresist composition used to form a thick film resist pattern on a support which includes (A) a compound that generates acid on irradiation with active light or radiation, and (B) a resin that displays increased alkali solubility under the action of acid, wherein the component (B) includes a resin (B1) which has a structural unit (b1) derived from an acrylate ester, in which a hydrogen atom of a carboxyl group has been substituted with an acid dissociable, dissolution inhibiting group represented by represented by a general formula (I) shown below:

[wherein, Y represents an aliphatic cyclic group or an alkyl group which may have a substituent group; n represents either 0 or an integer from 1 to 3; R¹ and R² each independently represents a hydrogen atom or a lower alkyl group having 1 to 5 carbon atoms].

Claims

1. A positive photoresist composition used to form a thick film resist pattern on a support, comprising:

(A) a compound that generates acid on irradiation with active light or radiation and (B) a resin that displays increased alkali solubility under the action of acid, wherein

said component (B) comprises a resin (B1) which has a structural unit (b1) derived from an acrylate ester, in which a hydrogen atom of a carboxyl group has been substituted with an acid dissociable, dissolution inhibiting group represented by a general formula (I) shown below;

[wherein, Y represents an aliphatic cyclic group or an alkyl group which may comprise a substituent group;

n represents either 0 or an integer from 1 to 3;

R¹ and R² each independently represents a hydrogen atom or a lower alkyl group of 1 to 5 carbon atoms].

2. The positive photoresist composition according to claim 1, wherein said structural unit (b1) comprises either one, or two or more selected from the group consisting of a structural unit represented by the general formula (b1-01) and a structural unit represented by the general formula (b1-02):

[wherein, Y represents an aliphatic cyclic group which may comprise a substituent group or an alkyl group;

n represents either 0 or an integer from 1 to 3;

m represents 0 or 1;

R each represents, independently, a hydrogen atom, a lower alkyl group of 1 to 5 carbon atoms, a fluorine atom or a fluorinated lower alkyl group of 1 to 5 carbon atoms;

R¹ and R² each represents, independently, a hydrogen atom or an lower alkyl group of 1 to 5 carbon atoms].

3. The positive photoresist composition according to claim 1, further comprising an alkali-soluble resin (C).

4. The positive photoresist composition according to claim 1, further comprising an acid diffusion control agent (D).

5. A thick film photoresist laminate, wherein a support and a thick film photoresist layer with a film thickness of 10 to 150 μ

m comprising the positive photoresist composition according to claim 1 is laminated.

6. A method for producing a thick film resist pattern comprising:

laminating for producing the thick film photoresist laminate according to claim 5,

exposing for selectively irradiating the thick film photoresist laminate with active light or radiation, and

developing for producing a thick film resist pattern following the exposure.

7. A method for producing a connecting terminal comprising:

forming a connection terminal formed from a conductor on a resist-free portion of a thick film resist pattern produced using the method for producing a thick film resist pattern according to claim 6.