ELECTRONIC DEVICE HAVING LIQUID CRYSTAL DISPLAY DEVICE

• US 20090072235A1
• Filed: 09/30/2008
• Published: 03/19/2009
• Est. Priority Date: 06/25/1996
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hirakata, Yoshiharu, Teramoto, Satoshi, Yamazaki, Shunpei, Zhang, Hongyong
• Granted Patent: US 8,665,409 B2
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: G02F 1/1339 Gaskets; Spacers; Sealing of cells
• CPC Class Codes: G02F 1/1345 Conductors connecting electrodes to cell terminals
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/136277 formed on a semiconductor substrate, e.g. of silicon
• CPC Class Codes: G09G 2320/0252 Improving the response speed
• CPC Class Codes: G09G 3/3648 using an active matrix G09G3/367 - G09G3/3696 take precedence

Abstract

A display device of the present invention includes a first substrate and a second substrate opposed to each other, a liquid crystal interposed between the first substrate and the second substrate, an active matrix circuit and a driving circuit each comprising a thin film transistor formed over the first substrate, a resin layer formed over the active matrix circuit and the driving circuit, a spacer formed over the active matrix circuit, a sealing material formed over the driving circuit, and a filler included in the sealing material and in contact with the resin layer.

Claims

1. A display device comprising:

a thin film transistor in a pixel region formed over a substrate, the thin film transistor including an active layer and a gate electrode with a gate insulating film interposed between the active layer and the gate electrode;

a silicon nitride film formed over the thin film transistor;

a resin film formed over the silicon nitride film;

a metal layer formed over the substrate; and

a sealing material formed over the metal layer,

wherein the sealing material covers a region where the resin film is not formed over the silicon nitride film.

15. A display device according to any one of claims 1 to 14, wherein the resin film comprises polyimide.

16. A display device according to any one of claims 1 to 14, wherein the sealing material comprises an epoxy resin.

17. A display device according to any one of claims 1 to 14, wherein a filler is included in the sealing material.

18. A display device according to any one of claims 1 to 14, wherein the sealing material overlaps a portion of the resin film.

23. A display device according to any one of claims 1, 6 and 11, wherein the metal layer constitutes a gate electrode in a driving circuit.

26. A display device according to any one of claims 1 to 14, wherein the display device is incorporated in one selected from the group consisting of a portable information processing terminal, a head mount display, a navigation system, a telephone, a camera, and a projector.

2. A display device comprising:

a thin film transistor in a pixel region formed over a substrate, the thin film transistor including an active layer and a gate electrode with a gate insulating film interposed between the active layer and the gate electrode;

a silicon nitride film formed over the thin film transistor;

a resin film formed over the silicon nitride film;

a wiring constituting an external terminal formed over the silicon nitride film; and

a sealing material formed over the wiring,

wherein the sealing material covers a region where the resin film is not formed over the silicon nitride film.

3. A display device comprising:

a pair of substrates facing each other;

a thin film transistor in a pixel region formed over one of the pair of substrates, the thin film transistor including an active layer and a gate electrode with a gate insulating film interposed between the active layer and the gate electrode;

a silicon nitride film formed over the thin film transistor;

a resin film formed over the silicon nitride film;

an opposite electrode formed adjacent to the other one of the pair of substrates; and

a sealing material in contact with the opposite electrode,

wherein the sealing material covers a region where the resin film is not formed over the silicon nitride film.

4. A display device comprising:

a thin film transistor in a pixel region formed over a substrate, the thin film transistor including an active layer and a gate electrode with a gate insulating film interposed between the active layer and the gate electrode;

a first silicon nitride film formed over the thin film transistor;

a driving circuit for driving the thin film transistor, the driving circuit including a transistor;

a second silicon nitride film formed over the transistor of the driving circuit;

a resin film formed over the first silicon nitride film;

an opposite electrode formed adjacent to the other one of the pair of substrates; and

a sealing material in contact with the opposite electrode,

wherein the sealing material covers a region where the resin film is not formed over the silicon nitride film.

5. A display device comprising:

a thin film transistor in a pixel region formed over a substrate, the thin film transistor including an active layer and a gate electrode with a gate insulating film interposed between the active layer and the gate electrode;

a resin film formed over the thin film transistor;

an inorganic insulating film formed over the resin film; and

a sealing material formed over and in contact with the inorganic insulating film.

6. A display device comprising:

a thin film transistor in a pixel region formed over a substrate, the thin film transistor including an active layer and a gate electrode with a gate insulating film interposed between the active layer and the gate electrode;

a resin film formed over the thin film transistor;

an inorganic insulating film formed over the resin film;

a metal layer formed over the substrate; and

a sealing material formed over the metal layer, and in contact with the inorganic insulating film.

7. A display device comprising:

a thin film transistor in a pixel region formed over a substrate, the thin film transistor including an active layer and a gate electrode with a gate insulating film interposed between the active layer and the gate electrode;

a resin film formed over the thin film transistor;

an inorganic insulating film formed over the resin film;

a sealing material in contact with the inorganic insulating film; and

a wiring constituting an external terminal extending outside the sealing material.

8. A display device comprising:

a pair of substrates facing each other;

a thin film transistor in a pixel region formed over one of the pair of substrates, the thin film transistor including an active layer and a gate electrode with a gate insulating film interposed between the active layer and the gate electrode;

a resin film formed over the thin film transistor;

an inorganic insulating film formed over the resin film;

an opposite electrode formed over the other one of the pair of substrates; and

a sealing material in contact with the inorganic insulating film and the opposite electrode.

9. A display device comprising:

a thin film transistor in a pixel region formed over a substrate, the thin film transistor including an active layer and a gate electrode with a gate insulating film interposed between the active layer and the gate electrode;

a driving circuit for driving the thin film transistor, the driving circuit including a transistor;

a resin film formed over the thin film transistor;

an inorganic insulating film formed over the resin film; and

a sealing material in contact with the inorganic insulating film.

10. A display device comprising:

a thin film transistor in a pixel region formed over a substrate, the thin film transistor including an active layer and a gate electrode with a gate insulating film interposed between the active layer and the gate electrode;

a silicon nitride film formed over the thin film transistor;

a resin film formed over the silicon nitride film;

an inorganic insulating film formed over the resin film; and

a sealing material formed over and in contact with the inorganic insulating film.

19. A display device according to any one of claims 5 to 14, wherein the inorganic insulating film is silicon oxide.

11. A display device comprising:

a thin film transistor in a pixel region formed over a substrate, the thin film transistor including an active layer and a gate electrode with a gate insulating film interposed between the active layer and the gate electrode;

a silicon nitride film formed over the thin film transistor;

a resin film formed over the silicon nitride film;

an inorganic insulating film formed over the resin film;

a metal layer formed over the substrate; and

a sealing material formed over the metal layer, and in contact with the inorganic insulating film.

12. A display device comprising:

a thin film transistor in a pixel region formed over a substrate, the thin film transistor including an active layer and a gate electrode with a gate insulating film interposed between the active layer and the gate electrode;

a silicon nitride film formed over the thin film transistor;

a resin film formed over the silicon nitride film;

an inorganic insulating film formed over the resin film;

a sealing material in contact with the inorganic insulating film; and

a wiring constituting an external terminal extending outside the sealing material.

24. A display device according to any one of claims 2, 7 and 12, wherein the wiring constituting the external terminal is a source wiring in a driving circuit.

13. A display device comprising:

a pair of substrates facing each other;

a thin film transistor in a pixel region formed over one of the pair of substrates, the thin film transistor including an active layer and a gate electrode with a gate insulating film interposed between the active layer and the gate electrode;

a silicon nitride film formed over the thin film transistor;

a resin film formed over the silicon nitride film;

an inorganic insulating film formed over the resin film;

an opposite electrode formed adjacent to the other one of the pair of substrates; and

a sealing material in contact with the inorganic insulating film and the opposite electrode.

20. A display device according to any one of claims 3, 4, 8, 9, 13 and 14, wherein the opposite electrode is in contact with the other one of the pair of substrates.

21. A display device according to any one of claims 3, 8 and 13, further comprising an orientation film in contact with the opposite electrode, and overlaps a portion of the sealing material.

14. A display device comprising:

a thin film transistor in a pixel region formed over a substrate, the thin film transistor including an active layer and a gate electrode with a gate insulating film interposed between the active layer and the gate electrode;

a first silicon nitride film formed over the thin film transistor;

a driving circuit for driving the thin film transistor, the driving circuit including a transistor;

a second silicon nitride film formed over transistor of the driving circuit;

a resin film formed over the first silicon nitride film;

an inorganic insulating film formed over the resin film; and

a sealing material in contact with the inorganic insulating film.

22. A display device according to any one of claims 4, 9 and 14, wherein the driving circuit is formed over the substrate.

25. A display device according to any one of claims 4 and 14, wherein the first silicon nitride film and the second silicon nitride film are continuous with each other.