METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE OBTAINED BY MEANS OF SAID METHOD
First Claim
1. A method of manufacturing a semiconductor device comprising a substrate and a semiconductor body in which at least one semiconductor element is formed, wherein on the substrate a semiconductor layer is formed comprising a mixed crystal of silicon and germanium, further called the silicon-germanium layer and having a lower surface close to the substrate and an upper surface more remote from the substrate, and wherein the silicon-germanium layer is subjected to an oxidizing treatment at a surface of the silicon-germanium layer while the other surface of the silicon-germanium layer is protected against the oxidizing treatment by a blocking layer, characterized in that the blocking layer is formed on the upper surface of the silicon-germanium layer, a cavity is formed in the semiconductor body below the silicon-germanium layer and the lower surface of the silicon-germanium layer is subjected to the oxidizing treatment through the cavity.
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Abstract
The invention relates to a method of manufacturing a semiconductor device (10) comprising a substrate (11) and a semiconductor body (12) in which at least one semiconductor element (1) is formed, wherein on the substrate (11) a semiconductor layer (2) is formed comprising a mixed crystal of silicon and germanium, further called the silicon-germanium layer (2) and having a lower surface close to the substrate (11) and an upper surface more remote from the substrate (11), and wherein the silicon-germanium layer (2) is subjected to an oxidizing treatment at a surface of the silicon-germanium layer (2) while the other surface of the silicon-germanium layer (2) is protected against the oxidizing treatment by a blocking layer (3). According to the invention, the blocking layer (3) is formed on the upper surface of the silicon-germanium layer (2), a cavity (5) is formed in the semiconductor body below the silicon-germanium layer (2) and the lower surface of the silicon-germanium layer (2) is subjected to the oxidizing treatment through the cavity (2). In this way, a device 10 may be obtained in which the surface of the silicon-germanium layer (2) after the oxidizing treatment does not suffer from roughening and/or germanium pile up. This enables e.g. to manufacture in particular a MOSFET on top of or in the silicon-germanium layer (2) with excellent properties and high yield.
24 Citations
16 Claims
- 1. A method of manufacturing a semiconductor device comprising a substrate and a semiconductor body in which at least one semiconductor element is formed, wherein on the substrate a semiconductor layer is formed comprising a mixed crystal of silicon and germanium, further called the silicon-germanium layer and having a lower surface close to the substrate and an upper surface more remote from the substrate, and wherein the silicon-germanium layer is subjected to an oxidizing treatment at a surface of the silicon-germanium layer while the other surface of the silicon-germanium layer is protected against the oxidizing treatment by a blocking layer, characterized in that the blocking layer is formed on the upper surface of the silicon-germanium layer, a cavity is formed in the semiconductor body below the silicon-germanium layer and the lower surface of the silicon-germanium layer is subjected to the oxidizing treatment through the cavity.
Specification