MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS

• US 20090073398A1
• Filed: 09/15/2008
• Published: 03/19/2009
• Est. Priority Date: 09/18/2007
• Status: Active Grant

• Current Assignee: CARL Zeiss SMT GmbH (Carl-Zeiss-Stiftung)
• Original Assignee: Carl Zeiss AG (Carl-Zeiss-Stiftung)
• Inventors: Feldmann, Heiko, Mann, Hans-Juergen, Singer, Wolfgang, Totzeck, Michael, Goehnermeier, Aksel, Beierl, Helmut, Hetzler, Jochen
• Granted Patent: US 8,107,054 B2
• Time in Patent Office: Days
• US Class Current: 355/30
• CPC Class Codes: G03F 7/70216 Mask projection systems
• CPC Class Codes: G03F 7/70308 Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
• CPC Class Codes: G03F 7/70566 Polarisation control

Abstract

The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

Claims

1. A method, comprising:

providing a microlithographic projection exposure apparatus having an illumination system and a projection objective;

illuminating a pupil plane of the illumination system with light; and

modifying, in a plane of the projection objective, at least one parameter of the light passing through the plane of the projection objective,

wherein;

the at least one parameter is selected from the group consisting of a phase of the light, an amplitude of the light and a polarization of the light; and

at least two diffraction orders of the light are modified in mutually different ways so that a mask-induced loss in image contrast obtained in the imaging of the structures is reduced compared to performing the method without modifying the at least one parameter.

2. The method as set forth in claim 1, wherein a lateral offset between a first interference image and a second interference image is reduced compared to performing the method without modifying the at least one parameter, the first interference image being obtained in a first illumination direction, and the second interference image being obtained in a second illumination direction.

3. A method as set forth in claim 2, wherein the lateral offset is not more than 5% of a period of the first interference image or second interference image.

4. A method as set forth in claim 2, wherein the lateral offset is reduced at least by a factor of 2 compared to performing the method without modifying the at least one parameter.

5. A method as set forth in claim 1, wherein the mask has structures, and the pupil plane of the illumination system is illuminated with an intensity distribution that is not in mirror image symmetrical relationship with respect to a plane of symmetry of the structures.

6. A method as set forth in claim 1, wherein the pupil plane of the illumination system is illuminated with an intensity distribution which is in point symmetrical relationship with respect to a center of the pupil plane.

7. A method as set forth in claim 1, wherein an optical filter with an optically effective surface is used to modify the at least one parameter, and the optically effective surface of the optical filter has regions capable of having different influence on a phase shift and/or an amplitude for at least one polarization direction.

8. A method as set forth in claim 1, wherein the mask has structures with a repetition direction, and the pupil plane of the illumination system is illuminated with an intensity distribution which has two illumination poles.

9. A method as set forth in claim 8, wherein a connecting straight line between centroids of the illumination poles is neither perpendicular nor parallel to the repetition direction.

10. A method as set forth in claim 8, wherein an angle between the centroids of the illumination poles and the repetition direction is less than 45°

.

11. A method as set forth in claim 8, wherein, in a pupil plane of the projection objective, a first diffraction order of one illumination pole is located at least in close neighborhood to a zero diffraction order of the other illumination pole, and vice versa.

12. A method as set forth in claim 1, wherein the pupil plane of the illumination system is illuminated so that at least two regions arranged in mirror image symmetrical relationship with each other in the pupil plane of the illumination system are illuminated at different moments in time.

13. A method as set forth in claim 12, wherein the phase and/or the amplitude is modified for at least one polarization direction at the different moments in time in mutually different ways.

14. A method as set forth in claim 12, wherein, at the different moments in time, an optical filter is replaced or adjusted to modify the phase and/or the amplitude.

15. A method as set forth in claim 1, wherein the at least one parameter is modified in a pupil plane of the projection objective.

16. A method as set forth in claim 1, wherein the at least one parameter is modified using an optical filter.

17. A method as set forth in claim 16, wherein the optical filter has a transmission T with a positional dependency described by the equation:

T(x, y)=T(−

x, −

y)

where x and y denote positional co-ordinates in the plane of the projection objective.

18. A method as set forth in claim 16, wherein the optical filter has a phase shift (p with a positional dependency described by the equation:

φ

(x, y)=φ

(−

x, −

y)

where x and y denote positional co-ordinates in the plane of the projection objective.

19. A method as set forth in claim 1, wherein the at least two different diffraction orders are the zero diffraction order and the first diffraction order.

20. A method as set forth in claim 1, wherein modifying the at least one parameter includes at least one of the following:

decentering at least one optical element in the projection objective;

displacing at least one optical element along an optical axis of the projection objective;

tilting at least one optical element in relation to an optical axis of the projection objective;

manipulating at least one mirror surface in the projection objective;

deforming at least one optical element in the projection objective; and

locally heating of at least one optical element in the projection objective.

21. A method as set forth in claim 1, wherein a characteristic width of structures on the mask is not more than two times a wavelength of the light.

22. A method as set forth in claim 1, wherein a characteristic width of structures on the mask is not more than 300 nm.

23. A method as set forth in claim 21, wherein the characteristic width is a half grating period of the structures on the mask.

24. A method, comprising:

providing a microlithographic projection exposure apparatus having an illumination system and a projection objective;

illuminating a pupil plane of the illumination system with light; and

modifying, in a plane of the projection objective, a polarization of the light passing through the plane of the projection objective,

wherein at least two diffraction orders of the light are modified in mutually different ways.

25. A method as set forth in claim 24, wherein a mask-induced loss in image contrast obtained in the microlithographic operation is reduced compared to performing the method without modifying the polarization of the light passing through the plane of the projection objective.

26. An optical system, comprising:

an optical filter configured to be used in a projection objective of a microlithographic projection exposure apparatus, the optical filter to manipulate light passing therethrough,

wherein a positional dependency of the manipulation of the light caused by the optical filter is described by the equation;

M(x, y)=M(−

x, −

y)

where x and y denote positional co-ordinates in a plane of the projection objective and wherein M is a parameter characteristic of the light passing through the optical filter.

27. An optical system as set forth in claim 26, wherein the parameter is selected from the group consisting of an amplitude of the light, a phase of the light and a polarization of the light.

28. An optical system as set forth in claim 26, wherein the optical filter has a transmission T with a positional dependency described by the equation:

T(x, y)=T(−

x, −

y)

where x and y denote positional co-ordinates in the plane of the projection objective.

29. An optical system as set forth in claim 26, wherein the optical filter has a phase shift φ

with a positional dependency described by the equation;

φ

(x, y)=φ

(−

x, −

y)

where x and y denote positional co-ordinates in a plane of the projection objective.

30. An apparatus, comprising:

an optical filter configured to manipulate light passing therethrough, a positional dependency of the manipulation of the light caused by the optical filter is described by the equation;

M(x, y)=M(−

x, −

y)

where x and y denote positional co-ordinates in a plane of the projection objective and wherein M is a parameter characteristic of the light passing through the optical filter,

wherein the apparatus is a microlithographic projection exposure apparatus.

31. A process, comprising:

using the apparatus of claim 30 to produce microstructured components.