Technique for Determining Mask Patterns and Write Patterns
First Claim
1. A method for generating a third mask pattern to be used on a photo-mask in a photolithographic process, comprising:
- adding first features to a first mask pattern to produce a second mask pattern, wherein a majority of the first features have a size characteristic larger than a pre-determined value, wherein the first features are topologically disconnected from second features in the first mask pattern that overlap third features in a target pattern, and wherein the first features are added at positions which are determined based on the gradient of a first cost function depending, at least in part, on the first mask pattern and the target pattern; and
generating the third mask pattern based on the second mask pattern, wherein the photo-mask corresponds to the third mask pattern.
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Abstract
During a method for generating a third mask pattern to be used on a photo-mask in a photolithographic process, first features are added to a first mask pattern to produce a second mask pattern. A majority of the first features may have a size characteristic larger than a pre-determined value, and that the first features are topologically disconnected from second features in the first mask pattern that overlap third features in a target pattern. Moreover, the first features may be added at positions which are determined based on the gradient of a first cost function depending, at least in part, on the first mask pattern and the target pattern. Then, the third mask pattern may be generated based on the second mask pattern, where the photo-mask corresponds to the third mask pattern.
53 Citations
41 Claims
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1. A method for generating a third mask pattern to be used on a photo-mask in a photolithographic process, comprising:
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adding first features to a first mask pattern to produce a second mask pattern, wherein a majority of the first features have a size characteristic larger than a pre-determined value, wherein the first features are topologically disconnected from second features in the first mask pattern that overlap third features in a target pattern, and wherein the first features are added at positions which are determined based on the gradient of a first cost function depending, at least in part, on the first mask pattern and the target pattern; and generating the third mask pattern based on the second mask pattern, wherein the photo-mask corresponds to the third mask pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A computer-program product for use in conjunction with a computer system, the computer-program product comprising a computer-readable storage medium and a computer-program mechanism embedded therein for generating a third mask pattern to be used on a photo-mask in a photolithographic process, the computer-program mechanism including:
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instructions for adding first features to a first mask pattern to produce a second mask pattern, wherein a majority of the first features have a size characteristic larger than a pre-determined value, wherein the first features are topologically disconnected from second features in the first mask pattern that overlap third features in a target pattern, and wherein the first features are added at positions which are determined based on the gradient of a first cost function depending, at least in part, on the first mask pattern and the target pattern; and instructions for generating the third mask pattern based on the second mask pattern, wherein the photo-mask corresponds to the third mask pattern.
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29. A computer system, comprising:
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at least one processor; at least one memory; and at least one program module, the program module stored in the memory and configured to be executed by the processor, wherein at least the program module is for generating a third mask pattern to be used on a photo-mask in a photolithographic process, at least the program module mechanism including; instructions for adding first features to a first mask pattern to produce a second mask pattern, wherein a majority of the first features have a size characteristic larger than a pre-determined value, wherein the first features are topologically disconnected from second features in the first mask pattern that overlap third features in a target pattern, and wherein the first features are added at positions which are determined based on the gradient of a first cost function depending, at least in part, on the first mask pattern and the target pattern; and instructions for generating the third mask pattern based on the second mask pattern, wherein the photo-mask corresponds to the third mask pattern.
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30. A computer system, comprising:
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means for computing; means for storing; and at least one program module mechanism, the program module mechanism stored in at least the means for storing and configured to be executed by at least the means for computing, wherein at least the program module is for generating a third mask pattern to be used on a photo-mask in a photolithographic process, at least the program module mechanism including; instructions for adding first features to a first mask pattern to produce a second mask pattern, wherein a majority of the first features have a size characteristic larger than a pre-determined value, wherein the first features are topologically disconnected from second features in the first mask pattern that overlap third features in a target pattern, and wherein the first features are added at positions which are determined based on the gradient of a first cost function depending, at least in part, on the first mask pattern and the target pattern; and instructions for generating the third mask pattern based on the second mask pattern, wherein the photo-mask corresponds to the third mask pattern.
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31. A semiconductor wafer, wherein the semiconductor wafer is produced in a photolithographic process that includes a photo-mask, wherein a third mask pattern to which the photo-mask corresponds is determined in a process including the operations of:
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adding first features to a first mask pattern to produce a second mask pattern, wherein a majority of the first features have a size characteristic larger than a pre-determined value, wherein the first features are topologically disconnected from second features in the first mask pattern that overlap third features in a target pattern, and wherein the first features are added at positions which are determined based on the gradient of a first cost function depending, at least in part, on the first mask pattern and the target pattern; and generating the third mask pattern based on the second mask pattern, wherein the photo-mask corresponds to the third mask pattern.
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32. A photo-mask for use in a photolithographic process, wherein a third mask pattern to which the photo-mask corresponds is determined in a process including the operations of:
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adding first features to a first mask pattern to produce a second mask pattern, wherein a majority of the first features have a size characteristic larger than a pre-determined value, wherein the first features are topologically disconnected from second features in the first mask pattern that overlap third features in a target pattern, and wherein the first features are added at positions which are determined based on the gradient of a first cost function depending, at least in part, on the first mask pattern and the target pattern; and generating the third mask pattern based on the second mask pattern, wherein the photo-mask corresponds to the third mask pattern.
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33. A data file stored in a computer-readable memory, comprising information corresponding to a third write pattern, wherein the third write pattern is to print a wafer pattern in a mask-less lithographic process, wherein the third write pattern is determined in a process that includes the operations of:
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adding first features to a first mask pattern to produce a second mask pattern, wherein a majority of the first features have a size characteristic larger than a pre-determined value, wherein the first features are topologically disconnected from second features in the first mask pattern that overlap third features in a target pattern, and wherein the first features are added at positions which are determined based on the gradient of a first cost function depending, at least in part, on the first mask pattern and the target pattern; and generating the third mask pattern based on the second mask pattern.
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34. A method for generating a write pattern to be used in a mask-less lithography process, comprising:
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adding first features to a first mask pattern to produce a second mask pattern, wherein a majority of the first features have a size characteristic larger than a pre-determined value, wherein the first features are topologically disconnected from second features in the first mask pattern that overlap third features in a target pattern, and wherein the first features are added at positions which are determined based on the gradient of a first cost function depending, at least in part, on the first mask pattern and the target pattern; and generating the third mask pattern based on the second mask pattern.
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35. A method for generating a third mask pattern to be used on a photo-mask in a photolithographic process, comprising:
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adding first features to a first mask pattern to produce a second mask pattern, wherein a majority of the first features are single rectangles, wherein the first features are topologically disconnected from second features in the first mask pattern that overlap third features in a target pattern, and wherein the first features are added at positions which are determined based on the gradient of a first cost function depending, at least in part, on the first mask pattern and the target pattern; and generating the third mask pattern based on the second mask pattern, wherein the photo-mask corresponds to the third mask pattern.
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36. A method for generating a mask pattern to be used on a photo-mask in a photolithographic process, comprising:
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filtering a first mask pattern, wherein the filtering includes defocusing the first mask pattern; and adding first features to a first mask pattern to produce a second mask pattern, wherein the first features are topologically disconnected from second features in the first mask pattern that overlap third features in a target pattern, and wherein the first features are added at positions which are determined based on the gradient of a first cost function depending, at least in part, on the first mask pattern and the target pattern.
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37. A method for generating a third mask pattern to be used on a photo-mask in a photolithographic process, comprising:
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adding first features to a first mask pattern to produce a second mask pattern, wherein the first features are topologically disconnected from second features in the first mask pattern that overlap third features in a target pattern, and wherein the first features are added at positions which are determined based on the gradient of a first cost function depending, at least in part, on the first mask pattern and the target pattern; and generating the third mask pattern based on the second mask pattern, wherein the generating involves evolving the positions and shapes of the first features, and wherein the photo-mask corresponds to the third mask pattern. - View Dependent Claims (38, 39, 40, 41)
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Specification