MANUFACTURING METHOD OF LIGHT EMITTING DEVICE, AND EVAPORATION DONOR SUBSTRATE

• US 20090075214A1
• Filed: 09/03/2008
• Published: 03/19/2009
• Est. Priority Date: 09/13/2007
• Status: Abandoned Application

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: SATO, Yosuke, YOKOYAMA, Kohei, IKEDA, Hisao, HIRAKATA, Yoshiharu
• Application Number:
  US12/203,424
• Publication Number:
  US 20090075214A1
• Time in Patent Office: Days
• US Class Current: 430/319
• CPC Class Codes: C23C 14/048 using irradiation by energy or particles
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/18 using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
• CPC Class Codes: H10K 71/421 using coherent electromagnetic radiation, e.g. laser annealing

Abstract

An object is to provide a manufacturing method of a light emitting device, by which manufacturing costs in manufacturing a flat panel display can be reduced. A first substrate provided with a reflective layer having an opening over a first surface, and provided with a light absorption layer and an evaporation material over a second surface facing the first surface is used. Then, in a state where the second surface of the first substrate is disposed close to a first surface of a second substrate, light irradiation is performed from the first surface side of the first substrate. The irradiation light is absorbed by a portion of the light absorption layer overlapping with the opening in the reflective layer, thereby heating the evaporation material. The heated evaporation material is attached to the first surface of the second substrate.

Claims

1. A manufacturing method of a light emitting device, comprising the steps of:

forming an evaporation material over a second surface of a first substrate so as to cover a light absorption layer, the first substrate being provided with a reflective layer having an opening over a first surface facing the second surface; and

performing light irradiation from a side of the first surface of the first substrate in a state where the second surface of the first substrate is disposed close to a surface of a second substrate thereby making irradiation light absorbed by a portion of the light absorption layer overlapping with the opening in the reflective layer to heat the evaporation material and to attach the evaporation material to the surface of the second substrate.

2. The manufacturing method of a light emitting device according to claim 1, wherein the light absorption layer is formed in an island shape to overlap with the opening in the reflective layer.

3. The manufacturing method of a light emitting device according to claim 1, wherein the irradiation light is infrared light.

4. The manufacturing method of a light emitting device according to claim 1, wherein the reflective layer has a reflectance of 85% or more for the irradiation light.

5. The manufacturing method of a light emitting device according to claim 1, wherein the reflective layer contains one of aluminum, silver, gold, platinum, copper, an alloy containing aluminum, and an alloy containing silver.

6. The manufacturing method of a light emitting device according to claim 1, wherein the light absorption layer has a reflectance of 60% or less for the irradiation light.

7. The manufacturing method of a light emitting device according to claim 1, wherein a thickness of the light absorption layer is 200 nm to 600 nm.

8. The manufacturing method of a light emitting device according to claim 1, wherein the light absorption layer contains one of tantalum nitride, titanium, and carbon.

9. The manufacturing method of a light emitting device according to claim 1, wherein the evaporation material is attached to the second surface of the first substrate by a wet method.

10. The manufacturing method of a light emitting device according to claim 1, wherein the evaporation material is an organic compound.

11. The manufacturing method of a light emitting device according to claim 1, wherein the evaporation material is one of a light emitting material and a carrier transporting material.

12. A manufacturing method of a light emitting device, comprising the steps of:

forming a reflective layer having an opening over a first surface of a first substrate;

forming a light absorption layer over a second surface facing the first surface of the first substrate;

forming an evaporation material over the second surface of the first substrate so as to cover the light absorption layer; and

performing light irradiation from a side of the first surface of the first substrate in a state where the second surface of the first substrate is disposed close to a surface of a second substrate thereby making irradiation light absorbed by a portion of the light absorption layer overlapping with the opening in the reflective layer to heat the evaporation material and to attach the evaporation material to the surface of the second substrate.

13. The manufacturing method of a light emitting device according to claim 12, wherein the light absorption layer is formed in an island shape to overlap with the opening in the reflective layer.

14. The manufacturing method of a light emitting device according to claim 12, wherein the irradiation light is infrared light.

15. The manufacturing method of a light emitting device according to claim 12, wherein the reflective layer has a reflectance of 85% or more for the irradiation light.

16. The manufacturing method of a light emitting device according to claim 12, wherein the reflective layer contains one of aluminum, silver, gold, platinum, copper, an alloy containing aluminum, and an alloy containing silver.

17. The manufacturing method of a light emitting device according to claim 12, wherein the light absorption layer has a reflectance of 60% or less for the irradiation light.

18. The manufacturing method of a light emitting device according to claim 12, wherein a thickness of the light absorption layer is 200 nm to 600 nm.

19. The manufacturing method of a light emitting device according to claim 12, wherein the light absorption layer contains one of tantalum nitride, titanium, and carbon.

20. The manufacturing method of a light emitting device according to claim 12, wherein the evaporation material is attached to the second surface of the first substrate by a wet method.

21. The manufacturing method of a light emitting device according to claim 12, wherein the evaporation material is an organic compound.

22. The manufacturing method of a light emitting device according to claim 12, wherein the evaporation material is one of a light emitting material and a carrier transporting material.

23. A manufacturing method of a light emitting device, comprising the steps of:

forming an evaporation material over a second surface of a first substrate so as to cover a light absorption layer, the first substrate being provided with a reflective layer having an opening over a first surface opposite to the second surface;

forming a first electrode over a second substrate;

performing light irradiation from a side of the first surface of the first substrate in a state where the second surface of the first substrate is disposed close to a surface of the second substrate thereby making irradiation light absorbed by a portion of the light absorption layer overlapping with the opening in the reflective layer to heat the evaporation material and to attach the evaporation material to the surface of the second substrate, after forming the first electrode; and

forming a second electrode over the surface of the second substrate, after performing light irradiation.

24. The manufacturing method of a light emitting device according to claim 23, wherein the light absorption layer is formed in an island shape to overlap with the opening in the reflective layer.

25. The manufacturing method of a light emitting device according to claim 23, wherein the irradiation light is infrared light.

26. The manufacturing method of a light emitting device according to claim 23, wherein the reflective layer has a reflectance of 85% or more for the irradiation light.

27. The manufacturing method of a light emitting device according to claim 23, wherein the reflective layer contains one of aluminum, silver, gold, platinum, copper, an alloy containing aluminum, and an alloy containing silver.

28. The manufacturing method of a light emitting device according to claim 23, wherein the light absorption layer has a reflectance of 60% or less for the irradiation light.

29. The manufacturing method of a light emitting device according to claim 23, wherein a thickness of the light absorption layer is 200 nm to 600 nm.

30. The manufacturing method of a light emitting device according to claim 23, wherein the light absorption layer contains one of tantalum nitride, titanium, and carbon.

31. The manufacturing method of a light emitting device according to claim 23, wherein the evaporation material is attached to the second surface of the first substrate by a wet method.

32. The manufacturing method of a light emitting device according to claim 23, wherein the evaporation material is an organic compound.

33. The manufacturing method of a light emitting device according to claim 23, wherein the evaporation material is one of a light emitting material and a carrier transporting material.

34. The manufacturing method of a light emitting device according to claim 23, wherein the first electrode is a pixel electrode.

35. An evaporation donor substrate comprising:

a reflective layer having an opening over a first surface; and

a light absorption layer over a second surface facing the first surface.

36. The evaporation donor substrate according to claim 35, wherein the light absorption layer is formed in an island shape to overlap with the opening in the reflective layer.

37. The evaporation donor substrate according to claim 35, wherein an evaporation material is attached to the light absorption layer.

38. The evaporation donor substrate according to claim 37, wherein the evaporation material is an organic compound.