NON-POLAR III-V NITRIDE MATERIAL AND PRODUCTION METHOD
First Claim
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1. A method for growing non-polar III-V nitride materials comprising:
- (a) providing a template material comprising at least one layer of non-polar III-V nitride semiconductor material;
(b) creating a mask on top of the template material; and
(c) using the mask to form at least one nano-pore and one nano-network in the template material.
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Abstract
A method for growing flat, low defect density, and strain-free thick non-polar III-V nitride materials and devices on any suitable foreign substrates using a fabricated nano-pores and nano-network compliant layer with an HVPE, MOCVD, and integrated HVPE/MOCVD growth process in a manner that minimum growth will occur in the nano-pores is provided. The method produces nano-networks made of the non-polar III-V nitride material and the substrate used to grow it where the network is continuous along the surface of the template, and where the nano-pores can be of any shape.
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Citations
25 Claims
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1. A method for growing non-polar III-V nitride materials comprising:
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(a) providing a template material comprising at least one layer of non-polar III-V nitride semiconductor material; (b) creating a mask on top of the template material; and (c) using the mask to form at least one nano-pore and one nano-network in the template material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification