INTERCONNECT STRUCTURES WITH PATTERNABLE LOW-K DIELECTRICS AND METHOD OF FABRICATING SAME
First Claim
1. An interconnect structure comprising:
- at least one patterned and cured low-k dielectric material located on a surface of a patterned and cured antireflective coating located between said at least one patterned and cured low-k dielectric material and a substrate, said at least one cured and patterned low-k material and said patterned and cured antireflective coating having conductively filled regions embedded therein.
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Abstract
The present invention provides an interconnect structure in which a patternable low-k material is employed as an interconnect dielectric material. Specifically, this invention relates to single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric. In general terms, the interconnect structure includes at least one patterned and cured low-k dielectric material located on a surface of a substrate. The at least one cured and patterned low-k material has conductively filled regions embedded therein and typically, but not always, includes Si atoms bonded to cyclic rings via oxygen atoms. The present invention also provides a method of forming such interconnect structures in which no separate photoresist is employed in patterning the patterned low-k material.
125 Citations
25 Claims
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1. An interconnect structure comprising:
at least one patterned and cured low-k dielectric material located on a surface of a patterned and cured antireflective coating located between said at least one patterned and cured low-k dielectric material and a substrate, said at least one cured and patterned low-k material and said patterned and cured antireflective coating having conductively filled regions embedded therein. - View Dependent Claims (2, 3, 4, 5)
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6. An interconnect structure comprising:
a lower patterned and cured low-k material layer located on a surface of a substrate, and an abutting upper patterned and cured low-k material layer located on said lower patterned and cured low-k material layer, said lower and upper patterned and cured low-k material layers having conductively filled regions and each of said cured and patterned low-k material layers has Si atoms bonded to cyclic rings via oxygen atoms. - View Dependent Claims (7, 8, 9, 10)
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11. An interconnect structure comprising:
a lower patterned and cured low-k material layer located on a surface of a substrate, and an abutting upper patterned and cured low-k material layer located on said lower patterned and cured low-k material layer, a patterned and cured antireflective coating located between said lower patterned and cured low-k dielectric material layer and said substrate, said lower and upper patterned and cured low-k material layers having conductively filled regions. - View Dependent Claims (12)
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13. A method of fabricating an interconnect structure comprising:
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providing at least one patternable low-k material on top of a substrate; forming at least one interconnect pattern within said at least one patternable low-k material, said at least one interconnect pattern is formed without utilizing a separate photoresist material; and curing said at least one patternable low-k material into a dielectric material having a dielectric constant of not more than 4.3. - View Dependent Claims (14, 15, 16, 17)
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18. A method of fabricating a dual-damascene interconnect structure comprising:
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providing a first patternable low-k material on top of a substrate; forming first interconnect patterns within the first patternable low-k material; providing a second patternable low-k material on top of the first patternable low-k material including said first interconnect patterns; forming second interconnect patterns within said second patternable low-k material; and curing at least said second patternable low-k material into a dielectric material having a dielectric constant of not more than 4.3. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25)
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Specification