PATTERNABLE DIELECTRIC FILM STRUCTURE WITH IMPROVED LITHOGRAPHY AND METHOD OF FABRICATING SAME

• US 20090079076A1
• Filed: 09/20/2007
• Published: 03/26/2009
• Est. Priority Date: 09/20/2007
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: International Business Machines Corporation
• Inventors: Lin, Qinghuang, Neumayer, Deborah A.
• Granted Patent: US 8,618,663 B2
• Time in Patent Office: Days
• US Class Current: 257/739
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/02167 the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/0276 using an anti-reflective coating anti-reflective coating for lithography in general G03F7/09
• CPC Class Codes: H01L 21/31 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques encapsulating layers H01L21/56; After treatment of these layers; Selection of materials for these layers
• CPC Class Codes: H01L 21/3121 Layers comprising organo-silicon compounds
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/3148 Silicon Carbide layers
• CPC Class Codes: H01L 21/76808 involving intermediate temporary filling with material
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 21/76835 Combinations of two or more different dielectric layers having a low dielectric constant H01L21/76832 takes precedence
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 2221/1031 Dual damascene by forming vias in the via-level dielectric prior to deposition of the trench-level dielectric
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED

Abstract

The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate, said inorganic antireflective coating is vapor deposited and comprises atoms of M, C and H wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La; forming at least one interconnect pattern within the at least one patternable low-k material; and curing the at least one patternable low-k material. The inventive method can be used to form dual-damascene interconnect structures as well as single-damascene interconnect structures.

Claims

1. An interconnect structure comprising:

at least one patterned and cured low-k dielectric material located on a surface of an patterned inorganic antireflective coating that is located atop a substrate, said inorganic antireflective coating comprises atoms of M, C and H wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La, and said at least one cured and patterned low-k material and said patterned inorganic antireflective coating having conductively filled regions embedded therein.

2. The interconnect structure of claim 1 wherein said inorganic antireflective coating further comprises atoms of O, N, S, F or mixtures thereof.

3. The interconnect structure of claim 1 wherein said at least one patterned and cured low-k dielectric material comprises a cured functionalized polymer having one or more irradiation/acid-sensitive imageable groups.

4. The interconnect structure of claim 3 wherein said functionalized polymer comprises a polymer of a hydrocarbon, a fluorinated hydrocarbon, a siloxane, a silane, a carbosilane, an oxycarbosilane, an organosilicate or a silsesquioxane.

5. The interconnect structure of claim 3 wherein said functionalized polymer further comprises a functionalized sacrificial pore generator.

6. An interconnect structure comprising:

a lower patterned and cured low-k material layer located on a surface of a patterned inorganic antireflective coating that is located atop a substrate, said inorganic antireflective coating comprises atoms of M, C and H wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La, and an abutting upper patterned and cured low-k material layer located on said lower patterned and cured low-k material layer, said lower and upper patterned and cured low-k material layers and said patterned inorganic antireflective coating having conductively filled regions.

7. The interconnect structure of claim 6 wherein said inorganic antireflective coating further comprises atoms of O, N, S, F or mixtures thereof.

8. The interconnect structure of claim 6 wherein said lower and upper patterned and cured low-k dielectric material layers each comprise a cured functionalized polymer having one or more irradiation/acid-sensitive imageable groups.

9. The interconnect structure of claim 8 wherein said functionalized polymer comprises a polymer of a hydrocarbon, a fluorinated hydrocarbon, a siloxane, a silane, a carbosilane, an oxycarbosilane, an organosilicate or a silsesquioxane.

10. The interconnect structure of claim 6 wherein said conductively filled regions within said lower patterned and cured low-k dielectric material layer are conductively filled vias, and said conductively filled regions within said upper patterned and cured low-k dielectric material layer are conductively filled lines.

11. A film stack comprising:

an inorganic antireflective coating; and

a patternable low-k dielectric material abutting said inorganic antireflective coating, said inorganic antireflective coating comprising atoms of M, C and H, wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La.

12. The film stack of claim 11 wherein said inorganic antireflective coating further includes atoms of O, N, S, F or mixtures thereof.

13. A method of fabricating an interconnect structure comprising:

providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate, said inorganic antireflective coating is vapor deposited and comprises atoms of M, C and H wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La;

forming at least one interconnect pattern within said at least one patternable low-k material, said at least one interconnect pattern is formed without utilizing a separate photoresist material; and

curing said at least one patternable low-k material into a dielectric material having a dielectric constant of not more than 4.3.

14. The method of claim 13 wherein said inorganic antireflective coating further comprises atoms of O, N, S, F or mixtures thereof.

15. The method of claim 13 wherein said at least one patternable low-k material comprises a functionalized polymer having one or more irradiation/acid-sensitive imageable groups.

16. The method of claim 15 wherein said functionalized polymer comprises a polymer of a hydrocarbon, a fluorinated hydrocarbon, a siloxane, a silane, a carbosilane, an oxycarbosilane, an organosilicate or a silsesquioxane.

17. The method of claim 13 wherein said at least one patternable low-k material further comprises a functionalized sacrificial pore generator.

18. The method of claim 13 wherein said curing comprises a thermal cure, an electron beam cure, an UV cure, an ion beam cure, a plasma cure, a microwave cure or any combination thereof.

19. A method of fabricating a dual-damascene interconnect structure comprising:

providing a first patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate, said inorganic antireflective coating is vapor deposited and comprises atoms of M, C and H wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La;

forming first interconnect patterns within the patternable low-k material without utilizing a separate photoresist material;

providing a second patternable low-k material on top of the first patternable low-k material including said first interconnect patterns;

forming second interconnect patterns within said second patternable low-k material without utilizing a separate photoresist material; and

curing at least said second patternable low-k material.

20. The method of claim 19 wherein said inorganic antireflective coating further comprises atoms of O, N, S, F or mixtures thereof.

21. The method of claim 19 wherein said first and second patternable low-k materials are the same or different and comprise functionalized polymers having one or more irradiation/acid-sensitive imageable groups.

22. The method of claim 21 wherein said functionalized polymers comprise polymers of hydrocarbons, fluorinated hydrocarbons, siloxanes, silanes, carbosilanes, oxycarbosilanes, organosilicates or silsesquioxanes.

23. The method of claim 19 wherein said curing at least said second patternable low-k material comprises a thermal cure, an electron beam cure, an UV cure, an ion beam cure, a plasma cure, a microwave cure or any combination thereof.

24. The method of claim 19 wherein said first patternable low-k material is a cured positive or negative-tone material and said second patternable low-k material is a positive or negative-tone material.