MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY INCLUDING THE SAME
First Claim
1. A magnetoresistive element comprising:
- a first magnetization reference layer having magnetization perpendicular to a film plane, a direction of the magnetization being invariable in one direction;
a magnetization free layer having magnetization perpendicular to the film plane, a direction of the magnetization being variable;
a first intermediate layer provided between the first magnetization reference layer and the magnetization free layer;
a magnetic phase transition layer provided on an opposite side of the magnetization free layer from the first intermediate layer, the magnetic phase transition layer being magnetically coupled to the magnetization free layer, and being capable of bidirectionally performing a magnetic phase transition between an antiferromagnetic material and a ferromagnetic material; and
an excitation layer provided on an opposite side of the magnetic phase transition layer from the magnetization free layer, and causing the magnetic phase transition layer to perform the magnetic phase transition from the antiferromagnetic material to the ferromagnetic material,the magnetization direction of the magnetization free layer being variable by flowing a current between the first magnetization reference layer and the magnetization free layer via the first intermediate layer.
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Abstract
A magnetoresistive element includes: a first magnetization reference layer having magnetization perpendicular to a film plane, a direction of the magnetization being invariable in one direction; a magnetization free layer having magnetization perpendicular to the film plane, a direction of the magnetization being variable; a first intermediate layer provided between the first magnetization reference layer and the magnetization free layer; a magnetic phase transition layer provided on an opposite side of the magnetization free layer from the first intermediate layer, the magnetic phase transition layer being magnetically coupled to the magnetization free layer, and being capable of bidirectionally performing a magnetic phase transition between an antiferromagnetic material and a ferromagnetic material; and an excitation layer provided on an opposite side of the magnetic phase transition layer from the magnetization free layer, and causing the magnetic phase transition layer to perform the magnetic phase transition from the antiferromagnetic material to the ferromagnetic material.
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Citations
20 Claims
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1. A magnetoresistive element comprising:
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a first magnetization reference layer having magnetization perpendicular to a film plane, a direction of the magnetization being invariable in one direction; a magnetization free layer having magnetization perpendicular to the film plane, a direction of the magnetization being variable; a first intermediate layer provided between the first magnetization reference layer and the magnetization free layer; a magnetic phase transition layer provided on an opposite side of the magnetization free layer from the first intermediate layer, the magnetic phase transition layer being magnetically coupled to the magnetization free layer, and being capable of bidirectionally performing a magnetic phase transition between an antiferromagnetic material and a ferromagnetic material; and an excitation layer provided on an opposite side of the magnetic phase transition layer from the magnetization free layer, and causing the magnetic phase transition layer to perform the magnetic phase transition from the antiferromagnetic material to the ferromagnetic material, the magnetization direction of the magnetization free layer being variable by flowing a current between the first magnetization reference layer and the magnetization free layer via the first intermediate layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 17, 18)
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9. A magnetoresistive element comprising:
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a first magnetization reference layer having magnetization perpendicular to a film plane, a direction of the magnetization being invariable in one direction; a magnetization free layer having magnetization perpendicular to the film plane, a direction of the magnetization being variable; a first intermediate layer provided between the first magnetization reference layer and the magnetization free layer; a magnetic phase transition layer provided on an opposite side of the magnetization free layer from the first intermediate layer, the magnetic phase transition layer being magnetically coupled to the magnetization free layer, and being capable of bidirectionally performing a magnetic phase transition between an antiferromagnetic material and a ferromagnetic material; a second magnetization reference layer provided on an opposite side of the magnetic phase transition layer from the magnetization free layer, the second magnetization reference layer having magnetization perpendicular to the film plane, a direction of the magnetization being invariable in one direction and being antiparallel to the magnetization direction of the first magnetization reference layer; a second intermediate layer provided between the magnetic phase transition layer and the second magnetization reference layer, and causing the magnetic phase transition layer to perform the magnetic phase transition from the antiferromagnetic material to the ferromagnetic material, the magnetization direction of the magnetization free layer being variable by flowing a current between the first magnetization reference layer and the magnetization free layer via the first intermediate layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 19, 20)
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Specification