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ELECTROSTATIC BREAKDOWN PROTECTION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE THEREWITH

  • US 20090080128A1
  • Filed: 12/05/2006
  • Published: 03/26/2009
  • Est. Priority Date: 12/07/2005
  • Status: Active Grant
First Claim
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1. An electrostatic breakdown protection circuit for protecting an open-drain output transistor from electrostatic breakdown, the electrostatic breakdown protection circuit comprising:

  • a diode having an anode thereof connected to a signal input terminal leading to the output transistor, and having a cathode thereof connected to a gate of the output transistor;

    a first resistor having one end thereof connected to the signal input terminal, and having the other end thereof connected to ground; and

    a PNP bipolar transistor or a P-channel field effect transistorhaving an emitter or a source thereof connected to the gate of the output transistor,having a base or a gate thereof connected to the one end of the first resistor andhaving a collector or a drain connected to ground.

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