PROCESS FOR MAKING DOPED ZINC OXIDE
First Claim
1. A process of making an n-type zinc-oxide-based thin film semiconductor by depositing a thin film material on a surface area of a substrate, either an entire surface area or a selected portion thereof, wherein deposition is by an atomic layer deposition process that is carried out substantially at or above atmospheric pressure, wherein the temperature of the substrate during deposition is under 300°
- C., and wherein the atomic layer deposition process comprises simultaneously directing a series of gas flows along elongated substantially parallel channels comprising, in order, at least a first reactive gaseous material containing a zinc-containing compound having a molar flow during deposition, an inert purge gas, and a second reactive gaseous material through a plurality of output openings spaced apart from the substrate, and transporting the substrate in a direction relative to the plurality of output openings, such that any point on the surface area of the substrate experiences a sequence of the first, the second and the third gaseous materials, whereby the sequence causes a thin film to be formed by atomic layer deposition on the surface area of the substrate,wherein a volatile indium-containing compound is introduced into the first reactive gaseous material or a supplemental gaseous material such that the indium-containing compound has a molar flow at a level of greater than 20 percent of the molar flow of the zinc-containing compound.
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Accused Products
Abstract
The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate, wherein the third gaseous material is inert and wherein a volatile indium-containing compound is introduced into the first reactive gaseous material or a supplemental gaseous material.
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Citations
25 Claims
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1. A process of making an n-type zinc-oxide-based thin film semiconductor by depositing a thin film material on a surface area of a substrate, either an entire surface area or a selected portion thereof, wherein deposition is by an atomic layer deposition process that is carried out substantially at or above atmospheric pressure, wherein the temperature of the substrate during deposition is under 300°
- C., and wherein the atomic layer deposition process comprises simultaneously directing a series of gas flows along elongated substantially parallel channels comprising, in order, at least a first reactive gaseous material containing a zinc-containing compound having a molar flow during deposition, an inert purge gas, and a second reactive gaseous material through a plurality of output openings spaced apart from the substrate, and transporting the substrate in a direction relative to the plurality of output openings, such that any point on the surface area of the substrate experiences a sequence of the first, the second and the third gaseous materials, whereby the sequence causes a thin film to be formed by atomic layer deposition on the surface area of the substrate,
wherein a volatile indium-containing compound is introduced into the first reactive gaseous material or a supplemental gaseous material such that the indium-containing compound has a molar flow at a level of greater than 20 percent of the molar flow of the zinc-containing compound. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
- C., and wherein the atomic layer deposition process comprises simultaneously directing a series of gas flows along elongated substantially parallel channels comprising, in order, at least a first reactive gaseous material containing a zinc-containing compound having a molar flow during deposition, an inert purge gas, and a second reactive gaseous material through a plurality of output openings spaced apart from the substrate, and transporting the substrate in a direction relative to the plurality of output openings, such that any point on the surface area of the substrate experiences a sequence of the first, the second and the third gaseous materials, whereby the sequence causes a thin film to be formed by atomic layer deposition on the surface area of the substrate,
Specification