Non-Volatile Memory Devices and Methods of Forming the Same
First Claim
1. A method of forming a non-volatile memory device, comprising:
- forming an upwardly protruding fin on a substrate;
sequentially stacking a first insulation layer and a first storage pattern on a sidewall of the fin;
sequentially stacking a second insulation layer and a second storage pattern on a top surface of the fin, the second insulation layer being thinner than the first insulation layer and the second storage pattern being connected to the first storage pattern;
sequentially forming a blocking insulation layer and a control gate conductive layer on the substrate; and
successively patterning the control gate conductive layer, the blocking insulation layer, the first storage pattern, and the second storage pattern to form a floating gate including a first storage gate and a second storage gate, a blocking insulation pattern, and a control gate electrode.
0 Assignments
0 Petitions
Accused Products
Abstract
A non-volatile memory device includes an upwardly protruding fin disposed on a substrate and a control gate electrode crossing the fin. A floating gate is interposed between the control gate electrode and the fin and includes a first storage gate and a second storage gate. The first storage gate is disposed on a sidewall of the fin, and the second storage gate is disposed on a top surface of the fin and is connected to the first storage gate. A first insulation layer is interposed between the first storage gate and the sidewall of the fin, and a second insulation layer is interposed between the second storage gate and the top surface of the fin. The second insulation layer is thinner than the first insulation layer. A blocking insulation pattern is interposed between the control gate electrode and the floating gate.
-
Citations
15 Claims
-
1. A method of forming a non-volatile memory device, comprising:
-
forming an upwardly protruding fin on a substrate; sequentially stacking a first insulation layer and a first storage pattern on a sidewall of the fin; sequentially stacking a second insulation layer and a second storage pattern on a top surface of the fin, the second insulation layer being thinner than the first insulation layer and the second storage pattern being connected to the first storage pattern; sequentially forming a blocking insulation layer and a control gate conductive layer on the substrate; and successively patterning the control gate conductive layer, the blocking insulation layer, the first storage pattern, and the second storage pattern to form a floating gate including a first storage gate and a second storage gate, a blocking insulation pattern, and a control gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
-
Specification