PROCESS FOR ATOMIC LAYER DEPOSITION
First Claim
1. A process of making a thin film transistor comprising at least five layers including a gate layer, a dielectric layer, a channel layer, a source-drain layer, and a protective layer, wherein at least three of the five layers are grown on a substrate by an atomic layer deposition process that is carried out substantially at or above atmospheric pressure, wherein the temperature of the substrate during deposition is under 300°
- C., and wherein the atomic layer deposition process comprises simultaneously directing a series of gas flows comprising, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material through a plurality of output openings spaced apart from the substrate, and transporting the substrate in a direction relative to the plurality of output openings, and such that any point on the substrate experiences a sequence of the first, the second and the third gaseous materials and whereby the sequence causes a layer to be formed by atomic layer deposition.
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Accused Products
Abstract
The present invention relates to a process of making thin film electronic components and devices, such as thin film transistors, environmental barrier layers, capacitors, insulators and bus lines, where most or all of the layers are made by an atmospheric atomic layer deposition process.
60 Citations
24 Claims
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1. A process of making a thin film transistor comprising at least five layers including a gate layer, a dielectric layer, a channel layer, a source-drain layer, and a protective layer, wherein at least three of the five layers are grown on a substrate by an atomic layer deposition process that is carried out substantially at or above atmospheric pressure, wherein the temperature of the substrate during deposition is under 300°
- C., and wherein the atomic layer deposition process comprises simultaneously directing a series of gas flows comprising, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material through a plurality of output openings spaced apart from the substrate, and transporting the substrate in a direction relative to the plurality of output openings, and such that any point on the substrate experiences a sequence of the first, the second and the third gaseous materials and whereby the sequence causes a layer to be formed by atomic layer deposition.
- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A process of making a thin film transistor comprising a substrate, a gate electrode, a gate dielectric, a semiconductor, a protective layer and a source electrode and a drain electrode, wherein the gate dielectric, the semiconductor and at least one of the protective layer, the gate electrode or the source and the drain electrodes are each formed by a process wherein the deposition process is an atomic layer deposition (ALD) process that is carried out substantially at or above atmospheric pressure, wherein the temperature of the substrate during deposition is under 300°
- C., and wherein the ALD process comprises simultaneously directing a series of gas flows comprising, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material through a plurality of output openings spaced apart from the substrate, and transporting the substrate in a direction relative to a plurality of output openings, and such that any point on the substrate experiences a sequence of the first, the second and the third gaseous materials and whereby the sequence causes a layer to be formed by atomic layer deposition.
Specification