WAFER BONDING ACTIVATED BY ION IMPLANTATION
First Claim
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1. A method for in situ bonding at least two substrates together comprising:
- placing the substrates into an ion target chamber;
exposing at least one surface of a first of said at least two substrates to an ion beam to reduce the surface species of the at least one surface in preparation for bonding to a second of said at least two substrates;
aligning the first and second substrates at a desired temperature within said chamber; and
placing the exposed surface of said first substrate together and in contact with a surface of said second substrate to form bonded substrates.
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Abstract
A method for wafer bonding two substrates activated by ion implantation is disclosed. An in situ ion bonding chamber allows ion activation and bonding to occur within an existing process tool utilized in a manufacturing process line. Ion activation of at least one of the substrates is performed at low implant energies to ensure that the wafer material below the thin surface layers remains unaffected by the ion activation.
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Citations
18 Claims
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1. A method for in situ bonding at least two substrates together comprising:
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placing the substrates into an ion target chamber; exposing at least one surface of a first of said at least two substrates to an ion beam to reduce the surface species of the at least one surface in preparation for bonding to a second of said at least two substrates; aligning the first and second substrates at a desired temperature within said chamber; and placing the exposed surface of said first substrate together and in contact with a surface of said second substrate to form bonded substrates. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for bonding at least two substrates together comprising:
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placing the substrates into a first chamber; exposing at least one surface of a first of said at least two substrates to an ion beam to reduce the surface species of the at least one surface in preparation for bonding to a second of said at least two substrates; aligning the first and second substrates at a desired temperature within said first chamber; moving said first and second substrates from said first chamber to a second chamber, said first and second chamber maintaining a vacuum environment therebetween; placing the exposed surface of said first substrate together and in contact with a surface of said second substrate within said second chamber to form bonded substrates. - View Dependent Claims (11, 12, 13, 14)
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15. An ion implanter processing system comprising:
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an ion source chamber configured to receive a feed gas and generate ions having a particular energy and mass, said ion source chamber having an aperture through which said ions are extracted; a target chamber positioned downstream of said ion source configured to receive said ion beam; a first chuck assembly positioned within said target chamber, said first chuck assembly configured to receive a first substrate aligned with said ion beam; and a second chuck assembly positioned within said target chamber, said second chuck assembly configured to receive a second substrate; said ion beam having a particular implant energy such that ions activate a surface layer of said first substrate. - View Dependent Claims (16, 17, 18)
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Specification