VAPOR DEPOSITION PROCESSES FOR TANTALUM CARBIDE NITRIDE MATERIALS
First Claim
1. A method for forming a tantalum-containing material on a substrate, comprising:
- heating a substrate to a temperature within a process chamber; and
exposing the substrate to a nitrogen-containing gas and a process gas comprising a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate, wherein the tantalum carbide nitride material is crystalline, and comprises interstitial carbon and elemental carbon having an interstitial/elemental carbon atomic ratio of about 2 or greater.
1 Assignment
0 Petitions
Accused Products
Abstract
Embodiments of the invention generally provide methods for depositing and compositions of tantalum carbide nitride materials. The methods include deposition processes that form predetermined compositions of the tantalum carbide nitride material by controlling the deposition temperature and the flow rate of a nitrogen-containing gas during a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating the substrate to a temperature within a process chamber, and exposing the substrate to a nitrogen-containing gas and a process gas containing a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate. The method further provides that the tantalum carbide nitride material is crystalline and contains interstitial carbon and elemental carbon having an interstitial/elemental carbon atomic ratio of greater than 1, such as about 2, 3, 4, or greater.
-
Citations
27 Claims
-
1. A method for forming a tantalum-containing material on a substrate, comprising:
-
heating a substrate to a temperature within a process chamber; and exposing the substrate to a nitrogen-containing gas and a process gas comprising a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate, wherein the tantalum carbide nitride material is crystalline, and comprises interstitial carbon and elemental carbon having an interstitial/elemental carbon atomic ratio of about 2 or greater. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
-
-
20. A method for forming a tantalum-containing material on a substrate, comprising:
-
heating a substrate to a predetermined temperature within a process chamber; and exposing the substrate to a nitrogen-containing gas and a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate, and the tantalum carbide nitride material has the chemical formula of TaCxNy, wherein x is within a range from about 0.20 to about 0.50 and y is within a range from about 0.20 to about 0.55. - View Dependent Claims (21, 22, 23)
-
-
24. A method for forming a tantalum-containing material on a substrate, comprising:
-
heating a substrate to a temperature within a range from about 400°
C. to about 500°
C.; andexposing the substrate to a nitrogen-containing gas and a tantalum precursor gas comprising tertbutylimido-tris(ethylmethylamido) tantalum while depositing a tantalum carbide nitride material on the substrate, wherein the tantalum carbide nitride material is crystalline, comprises an interstitial/elemental carbon atomic ratio of about 2 or greater, and has the chemical formula of TaCxNy, wherein x is within a range from about 0.20 to about 0.50 and y is within a range from about 0.20 to about 0.55. - View Dependent Claims (25, 26, 27)
-
Specification