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VAPOR DEPOSITION PROCESSES FOR TANTALUM CARBIDE NITRIDE MATERIALS

  • US 20090081868A1
  • Filed: 09/25/2007
  • Published: 03/26/2009
  • Est. Priority Date: 09/25/2007
  • Status: Active Grant
First Claim
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1. A method for forming a tantalum-containing material on a substrate, comprising:

  • heating a substrate to a temperature within a process chamber; and

    exposing the substrate to a nitrogen-containing gas and a process gas comprising a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate, wherein the tantalum carbide nitride material is crystalline, and comprises interstitial carbon and elemental carbon having an interstitial/elemental carbon atomic ratio of about 2 or greater.

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