THERMOELECTRIC DEVICES

• US 20090084421A1
• Filed: 09/28/2007
• Published: 04/02/2009
• Est. Priority Date: 09/28/2007
• Status: Abandoned Application

• Current Assignee: Battelle Memorial Institute
• Original Assignee: Battelle Memorial Institute
• Inventors: Olsen, Larry C., DeSteese, John G.
• Application Number:
  US11/864,877
• Publication Number:
  US 20090084421A1
• Time in Patent Office: Days
• US Class Current: 136/201
• CPC Class Codes: H10N 10/01 Manufacture or treatment
• CPC Class Codes: H10N 10/17 characterised by the structure or configuration of the cell or thermocouple forming the device

Abstract

One or more thin-film layers of thermoelectric material are formed on one or both sides of a substrate (e.g., a flexible substrate). In some embodiments, the thin-film layers have features that scatter phonons. A flexible substrate and its attached layers of thermoelectric material can be rolled up and/or arranged in a serpentine configuration for incorporation into a thermoelectric power source. In some embodiments, thin-film layers on one side of a substrate form a single, continuous thermoelectric element. In particular embodiments, one or more thin-film layers are fabricated on a substrate using an arrangement where the substrate is wrapped around a wheel and rotated one or more times past a sputtering device or other device for depositing material.

Claims

1. An apparatus comprising a first rolled up section of one or more layered thermoelectric materials on a first flexible substrate, wherein the first flexible substrate has a width, and wherein the one or more layered thermoelectric materials form a first continuous thermoelement with a first length substantially longer than the width of the first flexible substrate.

2. The apparatus of claim 1, wherein the first continuous thermoelement is on a first side of the first flexible substrate, and wherein the one or more layered thermoelectric materials form a second continuous thermoelement with a second length substantially longer than the width of the first substrate on a second side of the first flexible substrate.

3. The apparatus of claim 1, further comprising a second rolled up section of one or more layered thermoelectric materials on a second flexible substrate, wherein the first rolled up section of one or more layered thermoelectric materials is electrically coupled to the second rolled up section of one or more layered thermoelectric materials.

4. The apparatus of claim 1, wherein the first rolled up section of one or more layered thermoelectric materials comprises an end with a metallic film.

5. The apparatus of claim 1, further comprising:

a thermally conductive surface thermally coupled to the first rolled up section of one or more layered thermoelectric materials on the first flexible substrate;

and electrical leads electrically coupled to the first rolled up section of one or more layered thermoelectric materials.

6. A method comprising:

storing a portion of a flexible substrate in a wrapped configuration;

moving the portion of the flexible substrate a first time near an opening configured thermoelectric material in order to provide a first thermoelectric material deposit; and

moving the portion of the flexible substrate a second time near the opening in order to provide a second thermoelectric material deposit.

7. The method of claim 6, wherein storing the portion of the flexible substrate in the wrapped configuration comprises wrapping the portion of the flexible substrate around a surface.

8. The method of claim 7, wherein the surface is on a wheel.

9. The method of claim 7, wherein the surface is a rectangular surface.

10. The method of claim 6, wherein the flexible substrate comprises a first side and a second side, the method further comprising turning the flexible substrate from the first side to the second side after moving the portion of the flexible substrate near the opening the first time to provide the first thermoelectric material deposit and before moving the portion of the flexible substrate near the opening the second time to provide the second thermoelectric material deposit.

11. The method of claim 6, wherein moving the portion of the flexible substrate across the first opening to provide the first thermoelectric material deposit comprises sputtering the first thermoelectric material deposit onto the portion of the flexible substrate.

12. The method of claim 6, wherein the first thermoelectric material deposit and the second thermoelectric material deposit are configured to form one or more phonon barriers on the flexible substrate.

13. The method of claim 6, further comprising rolling the flexible substrate and the first and second thermoelectric material deposits into a cylinder configuration.

14. An apparatus comprising:

a flexible substrate having a width, a length, a first surface and a second surface; and

a first plurality of stacked thin-film layers comprising one or more semiconductor thermoelectric materials on the flexible substrate, wherein one or more portions of the plurality of stacked thin-film layers form nanostructures and are configured to scatter phonons.

15. The apparatus of claim 14, further comprising a second plurality of stacked thin-film layers comprising one or more semiconductor thermoelectric materials on the flexible substrate, wherein the first plurality of stacked thin-film layers is substantially on the first surface of the flexible substrate, and wherein the second plurality of stacked thin-film layers is substantially on the second surface of the flexible substrate.

16. A method comprising forming a plurality of stacked thin-film layers of one or more semiconductor thermoelectric materials on a flexible substrate, wherein the flexible substrate has a width, and wherein the one or more layered thermoelectric materials form a continuous thermoelement with a length substantially longer than the width of the flexible substrate.

17. The method of claim 16, wherein the plurality of stacked thin-film layers forms one or more nanostructures for scattering phonons in the plurality of stacked thin-film layers.

18. The method of claim 16, wherein forming the plurality of stacked thin-film layers of one or more semiconductor thermoelectric materials on the flexible substrate comprises sputtering the one or more semiconductor thermoelectric materials onto the flexible substrate.

19. The method of claim 16, further comprising forming the plurality of thin-film layers of one or more semiconductor thermoelectric materials and the flexible substrate into a serpentine configuration.

20. The method of claim 16, further comprising rolling up the plurality of thin-film layers of one or more semiconductor thermoelectric materials and the flexible substrate.

21. The method of claim 16, further comprising incorporating the plurality of stacked thin-film layers of one or more semiconductor thermoelectric materials and the flexible substrate into a thermoelectric generator.

22. A thermoelectric power source comprising:

a p-type thermoelectric element comprising a first rolled up section of one or more layered sputter-deposited thermoelectric materials on a first flexible substrate, wherein the one or more layered thermoelectric materials form a continuous p-type thermoelement with a first length substantially longer than the width of the first flexible substrate;

an n-type thermoelectric element comprising a second rolled up section of one or more layered sputter-deposited thermoelectric materials on a second flexible substrate, wherein the one or more layered thermoelectric materials form a continuous p-type thermoelement with a second length substantially longer than the width of the second flexible substrate;

a first thermally conductive plate thermally coupled to the p-type thermoelectric element and the n-type thermoelectric element;

a second thermally conductive plate thermally coupled to the p-type thermoelectric element and the n-type thermoelectric element;

a first electrical lead electrically coupled to the p-type thermoelectric element; and

a second electrical lead electrically coupled to the n-type thermoelectric element.