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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20090085131A1
  • Filed: 09/25/2008
  • Published: 04/02/2009
  • Est. Priority Date: 09/28/2007
  • Status: Abandoned Application
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate;

    a diffusion layer provided in said semiconductor substrate;

    a gate insulation film provided over said semiconductor substrate;

    a gate electrode provided over said gate insulation film; and

    a metallic silicide layer having Ni as a main component which is selectively provided over said diffusion layer,wherein a metal cap film having Co as a main component, is selectively provided over said silicide layer.

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